[HTML][HTML] Survey of deep learning accelerators for edge and emerging computing

S Alam, C Yakopcic, Q Wu, M Barnell, S Khan… - Electronics, 2024 - mdpi.com
The unprecedented progress in artificial intelligence (AI), particularly in deep learning
algorithms with ubiquitous internet connected smart devices, has created a high demand for …

Trending IC design directions in 2022

CH Chan, L Cheng, W Deng, P Feng… - Journal of …, 2022 - iopscience.iop.org
For the non-stop demands for a better and smarter society, the number of electronic devices
keeps increasing exponentially; and the computation power, communication data rate, smart …

A CMOS-integrated spintronic compute-in-memory macro for secure AI edge devices

YC Chiu, WS Khwa, CS Yang, SH Teng, HY Huang… - Nature …, 2023 - nature.com
Artificial intelligence edge devices should offer high inference accuracy and rapid response
times, as well as being energy efficient. Ensuring the security of these devices against …

A charge domain SRAM compute-in-memory macro with C-2C ladder-based 8-bit MAC unit in 22-nm FinFET process for edge inference

H Wang, R Liu, R Dorrance… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
Compute-in-memory (CiM) is one promising solution to address the memory bottleneck
existing in traditional computing architectures. However, the tradeoff between energy …

8-b precision 8-Mb ReRAM compute-in-memory macro using direct-current-free time-domain readout scheme for AI edge devices

JM Hung, TH Wen, YH Huang… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
Compute-in-memory (nvCIM) macros based on non-volatile memory make it possible for
artificial intelligence (AI) edge devices to perform energy-efficient multiply-and-accumulate …

33.4 A 28nm 2Mb STT-MRAM computing-in-memory macro with a refined bit-cell and 22.4-41.5 TOPS/W for AI inference

H Cai, Z Bian, Y Hou, Y Zhou, Y Guo… - … Solid-State Circuits …, 2023 - ieeexplore.ieee.org
Emerging non-volatile memory-based computing-in-memory (CIM) is an excellent fit for
resource-constrained edge-AI devices [1–6]. MRAM-CIM macros for MAC operations, at …

A 28 nm 16 kb bit-scalable charge-domain transpose 6T SRAM in-memory computing macro

J Song, X Tang, X Qiao, Y Wang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a compact, robust, and transposable SRAM in-memory computing
(IMC) macro to support feed forward (FF) and back propagation (BP) computation within a …

A survey of MRAM-centric computing: From near memory to in memory

Y Li, T Bai, X Xu, Y Zhang, B Wu, H Cai… - … on Emerging Topics …, 2022 - ieeexplore.ieee.org
Conventional von Neumann architecture suffers from bottlenecks in computing performance
and power consumption due to frequent data exchange between memory and processing …

Power-delay area-efficient processing-in-memory based on nanocrystalline Hafnia ferroelectric field-effect transistors

G Kim, DH Ko, T Kim, S Lee, M Jung… - … Applied Materials & …, 2022 - ACS Publications
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-
power and high-density nonvolatile memory devices in processing-in-memory (PIM) …

A 22 nm Floating-Point ReRAM Compute-in-Memory Macro Using Residue-Shared ADC for AI Edge Device

HH Hsu, TH Wen, WS Khwa, WH Huang… - IEEE Journal of Solid …, 2024 - ieeexplore.ieee.org
Artificial intelligence (AI) edge devices increasingly require the enhanced accuracy of
floating-point (FP) multiply-and-accumulate (MAC) operations as well as nonvolatile on-chip …