Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Q Cai, H You, H Guo, J Wang, B Liu, Z Xie… - Light: Science & …, 2021 - nature.com
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …
environmental, industrial, military, and biological fields. As a representative III-nitride …
Ultraviolet light-emitting diodes based on group three nitrides
A Khan, K Balakrishnan, T Katona - Nature photonics, 2008 - nature.com
Light-emitting diodes with emission wavelengths less than 400 nm have been developed
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …
Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire
H Miyake, G Nishio, S Suzuki, K Hiramatsu… - Applied Physics …, 2016 - iopscience.iop.org
The annealing of an AlN buffer layer in a carbon-saturated N 2–CO gas on a sapphire
substrate was investigated. The crystal quality of the buffer layer was significantly improved …
substrate was investigated. The crystal quality of the buffer layer was significantly improved …
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
P Dong, J Yan, J Wang, Y Zhang, C Geng… - Applied Physics …, 2013 - pubs.aip.org
We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-
patterned sapphire substrates (NPSS) prepared through a nanosphere lithography …
patterned sapphire substrates (NPSS) prepared through a nanosphere lithography …
High power AlGaN ultraviolet light emitters
M Shatalov, W Sun, R Jain, A Lunev, X Hu… - Semiconductor …, 2014 - iopscience.iop.org
We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV)
light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output …
light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output …
Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
Improvement mechanism of sputtered AlN films by high-temperature annealing
The improvement mechanism of sputtered AlN films by high temperature annealing in
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …
[HTML][HTML] Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …