Green gap in GaN-based light-emitting diodes: in perspective
Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
Advances and prospects in nitrides based light-emitting-diodes
L Jinmin, L Zhe, L Zhiqiang, Y Jianchang… - Journal of …, 2016 - iopscience.iop.org
Due to their low power consumption, long lifetime and high efficiency, nitrides based white
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
Excitation power and temperature dependences of the photoluminescence (PL) spectra are
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”
In this paper, we review the recent developments (in years 2010–2011) of energy-saving
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green-and red-emitting InGaN quantum wells
(QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for …
(QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for …
Candle light‐style organic light‐emitting diodes
JH Jou, CY Hsieh, JR Tseng, SH Peng… - Advanced Functional …, 2013 - Wiley Online Library
In response to the call for a physiologically‐friendly light at night that shows low color
temperature, a candle light‐style organic light emitting diode (OLED) is developed with a …
temperature, a candle light‐style organic light emitting diode (OLED) is developed with a …
Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes
The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum
wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was …
wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was …
[HTML][HTML] Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells
Type-II InGaN-ZnGeN 2 quantum wells (QWs) are studied as improved active regions for
light-emitting diodes emitting in the blue (λ∼ 485 nm) and green (λ∼ 530 nm) spectral …
light-emitting diodes emitting in the blue (λ∼ 485 nm) and green (λ∼ 530 nm) spectral …