Low-temperature carrier dynamics in MBE-grown InAs/GaAs single-and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain …
AE De Los Reyes, JD Vasquez… - Optical Materials …, 2019 - opg.optica.org
The photocarrier dynamics in molecular beam epitaxy (MBE)-grown single-(SLQD) and multi-
layered (MLQD) InAs/GaAs quantum dots were studied. Photoluminescence (PL) …
layered (MLQD) InAs/GaAs quantum dots were studied. Photoluminescence (PL) …
Terahertz emission and photoluminescence of silicon nanowires electrolessly etched on the surface of silicon (100),(110), and (111) substrates for photovoltaic cell …
Silicon nanowires (SiNWs) were etched on Si (100),(110), and (111) substrates. Slanted
nanowires with respect to the surface normal were produced on the Si (110) and (111) …
nanowires with respect to the surface normal were produced on the Si (110) and (111) …
The use of MACE technique on amorphous silicon-rich silicon nitride thin films for the formation of spherical silica nanoparticles
AL Muñoz-Rosas, A Rodríguez-Gómez… - Journal of Materials …, 2019 - Springer
We present a method that employs the metal-assisted chemical etching technique and a
subsequent NH 3 plasma treatment for obtaining silica nanoparticles (SNPs) uniformly …
subsequent NH 3 plasma treatment for obtaining silica nanoparticles (SNPs) uniformly …
Terahertz Emission from CuO Nanowires Synthesized Through Thermal Oxidation of Cu Foils
We demonstrate terahertz (THz) emission from cupric oxide nanowires (CuO NWs)
synthesized through thermal oxidation of Cu foils in ambient air by heating the foils in a …
synthesized through thermal oxidation of Cu foils in ambient air by heating the foils in a …
Luminescence and carrier dynamics in nanostructured silicon
NI Cabello, P Tingzon, K Cervantes, A Cafe… - Journal of …, 2017 - Elsevier
We report increased radiation in the visible and terahertz (THz) regimes in silicon (Si)-based
nanostructures. The nanostructures, Si nanowires (SiNWs) and porous Si (PSi), were …
nanostructures. The nanostructures, Si nanowires (SiNWs) and porous Si (PSi), were …
Temperature-dependent terahertz time-domain spectroscopy of 3D, 2D, and 0D semiconductor heterostructures
A De Los Reyes, H Bardolaza, JD Vasquez… - Journal of Materials …, 2020 - Springer
Carrier transport in semiconductors with different dimensionalities, ie, 3D (bulk), 2D (QW),
and 0D (QD), were investigated via temperature-dependent terahertz time-domain …
and 0D (QD), were investigated via temperature-dependent terahertz time-domain …
Enhanced Terahertz Emission and Raman Signal from Silicon Nanopyramids
The Raman scattering and Terahertz emission of silicon nanopyramids (SiNPys) formed at
different etching times were investigated. Additionally, photoluminescence spectroscopy …
different etching times were investigated. Additionally, photoluminescence spectroscopy …
Geometric Study on Silicon Nanowires Fabricated via Silver-assisted Electroless Etching.
NIF Cabello, EP Anguluan, JCR Ragasa… - Science …, 2017 - search.ebscohost.com
Controlling the geometry of silicon nanowires (SiNWs) has been of paramount necessity for
the viability of mass-producing nanostructured devices. The length, radius, and crystallinity …
the viability of mass-producing nanostructured devices. The length, radius, and crystallinity …