Atomic layer deposition and post-deposition annealing of PbTiO3 thin films
J Harjuoja, A Kosola, M Putkonen, L Niinistö - Thin Solid Films, 2006 - Elsevier
Lead titanate thin films were deposited by atomic layer deposition on Si (100) using Ph4Pb
and Ti (Oi-Pr) 4 as metal precursors and O3 and H2O as oxygen sources. The influence of …
and Ti (Oi-Pr) 4 as metal precursors and O3 and H2O as oxygen sources. The influence of …
Structural, dielectric, and ferroelectric properties of PbTiO3 thin films by a simple sol–gel technique
D Bao, X Yao, N Wakiya, K Shinozaki… - Materials Science and …, 2002 - Elsevier
PbTiO3 (PT) thin films were prepared on various substrates by a simple sol–gel technique.
The surface morphology and crystal structure, dielectric, and ferroelectric properties of the …
The surface morphology and crystal structure, dielectric, and ferroelectric properties of the …
Strain behavior of thin film (30/70) examined through piezoforce microscopy
S Dunn - Journal of Applied Physics, 2003 - pubs.aip.org
Using an atomic force microscope (AFM) modified to perform piezo-AFM we have
investigated the piezoelectric response of sol-gel thin film lead zirconate titanate (PZT 30/70 …
investigated the piezoelectric response of sol-gel thin film lead zirconate titanate (PZT 30/70 …
Microstructural and transport properties of LaNiO3− δ films grown on Si (111) by chemical solution deposition
Electrically conductive LaNiO3− δ (LNO) thin films with typical thickness of 200 nm were
deposited on Si (111) substrates by a chemical solution deposition method and heat-treated …
deposited on Si (111) substrates by a chemical solution deposition method and heat-treated …
In situ deposition of PbTiO3 thin films by direct current reactive magnetron sputtering
A Iljinas, L Marcinauskas, V Stankus - Applied Surface Science, 2016 - Elsevier
The lead titanate thin films were deposited using in situ layer-by-layer reactive magnetron
sputtering. The synthesis of films was performed on platinized silicon (Pt/Ti/SiO 2/Si) …
sputtering. The synthesis of films was performed on platinized silicon (Pt/Ti/SiO 2/Si) …
BaTiO3 on LaNiO3 and Si thin films prepared by mist plasma evaporation
H Huang, X Yao, M Wang, X Wu - Journal of crystal growth, 2004 - Elsevier
Conductive LaNiO3 thin films were prepared on Si substrate by mist plasma evaporation
and were used as bottom electrodes for BaTiO3 thin films. The structure and electrical …
and were used as bottom electrodes for BaTiO3 thin films. The structure and electrical …
Structural and Electrical Characterizations of PbTiO3 Thin Films Grown on LaNiO3-Buffered Pt∕ Ti∕ SiO2∕ Si Substrates by Liquid Phase Deposition
MC Hsu, YM Sun, C Leu, MH Hon - Journal of the …, 2006 - iopscience.iop.org
Ferroelectric (PTO) thin films were successfully deposited on the (LNO) buffered substrates
by the liquid phase deposition method. The LNO layer served as both the bottom electrode …
by the liquid phase deposition method. The LNO layer served as both the bottom electrode …
Small-strain (100)/(001)-oriented epitaxial PbTiO3 films with film thickness ranging from nano- to micrometer order grown on (100)CaF2 substrates by metal organic …
MT Chentir, S Utsugi, T Fujisawa, Y Ehara… - Journal of Materials …, 2013 - Springer
Abstract Changes in crystal structure and ferroelectric properties are investigated for
(100)/(001)-oriented epitaxial PbTiO 3 thin films grown on CaF 2 substrates by metal organic …
(100)/(001)-oriented epitaxial PbTiO 3 thin films grown on CaF 2 substrates by metal organic …
Effects of LaNiO3 buffer layers on preferential orientation growth and properties of PbTiO3 thin films
X Yang, X Wu, W Ren, P Shi, X Yan, H Lei, X Yao - Ceramics international, 2008 - Elsevier
(100)-and (101)-oriented PbTiO3 (PT) thin films on conductive LaNiO3 (LNO)-coated Si
(111) substrates were prepared by a metal-organic decomposition method. It is found that …
(111) substrates were prepared by a metal-organic decomposition method. It is found that …