Stretchable and foldable silicon integrated circuits
We have developed a simple approach to high-performance, stretchable, and foldable
integrated circuits. The systems integrate inorganic electronic materials, including aligned …
integrated circuits. The systems integrate inorganic electronic materials, including aligned …
Mobility-enhancement technologies
Applying stress to induce appropriate strain in the channel region of metal-oxide-
semiconductor field effect transistors (MOSFETs) increases both electron and hole mobilities …
semiconductor field effect transistors (MOSFETs) increases both electron and hole mobilities …
Strained semiconductor by full wafer bonding
L Forbes, JE Geusic, S Akram - US Patent 7,439,158, 2008 - Google Patents
APPLY FORCE TO BOW FLEXBLE SUBSTRATE WAFER a wafer with a strained
semiconductor. In various embodi ments of the method, a predetermined contour is formed …
semiconductor. In various embodi ments of the method, a predetermined contour is formed …
Strained semiconductor by full wafer bonding
L Forbes, JE Geusic, S Akram - US Patent 7,994,595, 2011 - Google Patents
5,877,070 5,879,996 5,963,817 6,022,793 6,083,324 6,093,623 6,096,433 6,103,598
6,107,661 6,136,666 6,143,628 6,174,784 6,204,145 6,228,694 6,242,324 6,251,751 …
6,107,661 6,136,666 6,143,628 6,174,784 6,204,145 6,228,694 6,242,324 6,251,751 …
Strained Si/SiGe/SOI islands and processes of making same
L Forbes - US Patent 7,153,753, 2006 - Google Patents
(57) ABSTRACT A process of making a strained silicon-on-insulator structure is disclosed. A
recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms …
recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms …
Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon …
S Chatterjee, S Chattopadhyay - Superlattices and Microstructures, 2017 - Elsevier
In the current work, an analytical model has been developed to estimate the amount of
induced stress in nanowires which are horizontally embedded with different fractions within …
induced stress in nanowires which are horizontally embedded with different fractions within …
Strained Si/SiGe/SOI islands and processes of making same
L Forbes - US Patent 7,262,428, 2007 - Google Patents
2005, OO17273 A1 2005.0020094 A1 2005/0O23529 A1 2005, 0023612 A1 2005, 0023616
A1 2005/0O296. 19 A1 2005.0029683 A1 2005, OO32296 A1 2005/025O274 A1 …
A1 2005/0O296. 19 A1 2005.0029683 A1 2005, OO32296 A1 2005/025O274 A1 …
Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors
CF Huang, YJ Yang, CY Peng, F Yuan… - Applied physics letters, 2006 - pubs.aip.org
The current change of n-channel polycrystalline silicon thin-film transistors is analyzed
experimentally and theoretically under different strain conditions. Under the uniaxial strain …
experimentally and theoretically under different strain conditions. Under the uniaxial strain …
Strained Pt Schottky diodes on n-type Si and Ge
The variation of electron barrier height and built-in voltage of Pt Schottky diodes on the
mechanically strained n-type Si and Ge is investigated experimentally and theoretically. The …
mechanically strained n-type Si and Ge is investigated experimentally and theoretically. The …
Microelectronic devices having a curved surface and methods for manufacturing the same
T Jiang, ZY Xia, S Sandireddy - US Patent 7,633,157, 2009 - Google Patents
Microelectronic devices and methods for manufacturing microelectronic devices are
disclosed herein. In one embodiment, a device includes a support member and a flexed …
disclosed herein. In one embodiment, a device includes a support member and a flexed …