This work presents, performance evaluation of linearity and intermodulation distortion of
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …

This paper investigates the electrical characteristics of the nanoscale n-channel double gate
fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials …

Recent developments on the further optimization of the selective atomic layer deposition
(ALD) of zirconium oxide (ZrO 2) onto silicon over electroplated copper are reported with tris …

This work presents, the reliability of GaN/ZrO 2 (Gallium Nitride/Zirconium dioxide) interfacial
layer defects on 8-nm Gallium Nitride (GaN) Silicon-on-Insulator (SOI) FinFET (GaN-SOI …

A novel GaN (Gallium Nitride) SOI (Silicon-on-Insulator) FinFET (GaN-SOI FinFET) is
proposed in this work using TCAD. All the results of the proposed device with 8 nm gate …

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-
on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated …

Microelectronic materials and especially electronics material for flexible electronics are of
increasing interest in numerous applications from wearable health monitoring, displays, and …

This paper presents the comparative study of short channel effects (SCEs) namely Drain
Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) for Si and GaN based n …

To enable the advancement of Si based technology, necessary to increase computing
power and the manufacture of more compact circuits, significant changes to the current MOS …