Nd: YAG at its 50th anniversary: Still to learn
V Lupei, A Lupei - Journal of Luminescence, 2016 - Elsevier
Nd:YAG at its 50th anniversary: Still to learn - ScienceDirect Skip to main contentSkip to
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Thermal lensing in Nd:GdVO4 laser with direct in-band pumping at 912 nm
We report on the thermal lensing effect study in a 1063-nm Nd: GdVO 4 laser with in-band
diode pumping at 912 nm. The thermal lensing focal power was determined using the …
diode pumping at 912 nm. The thermal lensing focal power was determined using the …
Passively Q-switched Nd: GdLaNbO4 laser based on 2D PdSe2 nanosheet
Y Ma, S Zhang, S Ding, X Liu, X Yu, F Peng… - Optics & Laser …, 2020 - Elsevier
In this work, a novel two-dimensional palladium diselenide (PdSe 2) nanosheet was
synthesized by chemical vapour deposition method and used as a saturable absorber (SA) …
synthesized by chemical vapour deposition method and used as a saturable absorber (SA) …
High power and beam quality continuous-wave Nd:GdVO4 laser in-band diode-pumped at 912 nm
We report on the performance of a continuous-wave Nd: GdVO_4 laser in-band diode-
pumped at 912 nm with high output power and excellent beam quality. The laser produced …
pumped at 912 nm with high output power and excellent beam quality. The laser produced …
Passively Q-switched Tm: YAlO3 laser based on WS2/MoS2 two-dimensional nanosheets at 2 μm
A comparison of the pulsed laser performances of 2 μm passively Q-switched Tm: YAlO 3
(YAP) lasers based on the use of tungsten disulfide (WS 2) and molybdenum disulfide (MoS …
(YAP) lasers based on the use of tungsten disulfide (WS 2) and molybdenum disulfide (MoS …
Passively mode-locked high power Nd: GdVO4 laser with direct in-band pumping at 912 nm
We report on the first semiconductor saturable absorber mirror mode-locked Nd: GdVO 4
laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output …
laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output …
Low heat and high efficiency Nd:GdVO4 laser pumped by 913 nm
JL Ma, B Xiong, L Guo, PF Zhao, L Zhang… - Laser Physics …, 2010 - Wiley Online Library
A Nd: GdVO4 crystal is pumped directly into its emitting level at 913 nm for the first time to
the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at …
the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at …
Two-dimensional MoS2 passively Q-switched Nd: GdNbO4 laser under direct pumping
Y Ma, Y Hong, X Liu, H Dang, X Zheng, L Kong… - Infrared Physics & …, 2020 - Elsevier
In this paper, the characteristic of passively Q-switched Nd: GdNbO 4 laser using two-
dimension (2D) material MoS 2 as SA under 879 nm direct pumping was demonstrated for …
dimension (2D) material MoS 2 as SA under 879 nm direct pumping was demonstrated for …
Tungsten disulfide passively Q-switched Nd: GdNbO4 laser under 879 nm direct pumping
Y Ma, H Dang, S Ding, X Zheng, Q Zhang - Infrared Physics & Technology, 2021 - Elsevier
This paper reports a tungsten disulfide (WS 2) passively Q-switched 1066 nm Nd: GdNbO 4
laser under an 879 nm diode directly pumping into emitting level for the first time. In the …
laser under an 879 nm diode directly pumping into emitting level for the first time. In the …
Improved laser efficiency by direct diode laser pumping of the radiation-resistant Nd: gadolinium–scandium–gallium garnet
Spectroscopic investigation of the radiation-resistant Nd: GSGG crystals and ceramics
reported in this paper evidences that the absorption line at 883 nm corresponding to the …
reported in this paper evidences that the absorption line at 883 nm corresponding to the …