Selective doping in silicon carbide power devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers
In this work an extensive characterization over XeCl multishot laser irradiation was
performed at different energy densities and with different thicknesses of graphitic coating …
performed at different energy densities and with different thicknesses of graphitic coating …
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND> 10 19 cm− 3)
n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the …
n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the …
Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures
JJ Gu, JH Zhao, MY Bu, SM Wang, L Fan, Q Huang… - Results in Physics, 2022 - Elsevier
In this work, we investigate the radiation damage of 6H-SiC crystals by phosphorus (P) ion
implantation. The 6H-SiC samples were implanted at different energy with the same fluence …
implantation. The 6H-SiC samples were implanted at different energy with the same fluence …
The damage investigations of 4H–SiC after P-ion irradiation
J Zhao, L Ye, X Jiao, Q Yue, Y Liu - Applied Physics A, 2020 - Springer
In this work, a single crystal of 4H–SiC was subjected to phosphorus irradiation at 100 keV
with four different fluences at room temperature (RT) and post-irradiation annealing …
with four different fluences at room temperature (RT) and post-irradiation annealing …
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing
This paper discusses a novel annealing technique for 4H-SiC implants which involves the
use of pulsed XeCl laser (l= 308 nm). In particular, an absorbing graphitic coating is used to …
use of pulsed XeCl laser (l= 308 nm). In particular, an absorbing graphitic coating is used to …
Phosphorus implantation into 4H-SiC at room and elevated temperature
J Müting, V Bobal, L Vines… - … Science and Technology, 2021 - iopscience.iop.org
Phosphorus implantation is essential to create localized n-type doped regions in 4H-SiC.
The realized profiles may, however, deviate from the desired ones, affecting device …
The realized profiles may, however, deviate from the desired ones, affecting device …
Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
A high energy ion implantation system has been recently developed at the Tandem Van de
Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of …
Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of …
TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer
Within this work, the effect of high dose Al ion implantation on 4H-SiC epitaxial layer is
displayed. Through TEM investigation it is demonstrated that the implanted surface is …
displayed. Through TEM investigation it is demonstrated that the implanted surface is …
Ni/Heavily-Doped 4H-SiC Schottky Contacts
In this work, we focus on the electrical characterization of Ni Schottky contact on n-type
heavily doped (ND> 1019 cm− 3) 4H-SiC layer, achieved by P-ion implantation. In particular …
heavily doped (ND> 1019 cm− 3) 4H-SiC layer, achieved by P-ion implantation. In particular …