III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding
We propose the Ge CMOS photonics platform with Ge-on-Insulator (GOI) substrate on which
Ge mid-infrared photonic devices and Ge CMOS transistors can be monolithically integrated …
Ge mid-infrared photonic devices and Ge CMOS transistors can be monolithically integrated …
Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof
M Gunji-Yoneoka, A Suyama, J Pachamuthu… - US Patent …, 2018 - Google Patents
An alternating stack of insulating layers and spacer material layers is formed over a
semiconductor substrate. Memory openings are formed through the alternating stack. An …
semiconductor substrate. Memory openings are formed through the alternating stack. An …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
Operation of (111) Ge-on-insulator n-channel MOSFET fabricated by smart-cut technology
In this letter, we demonstrate the well-behaved operation of (111) Ge-on-insulator (GOI) n-
channel metaloxide-semiconductor field-effect transistors (nMOSFETs) with excellent …
channel metaloxide-semiconductor field-effect transistors (nMOSFETs) with excellent …
Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures
MK Hudait, SW Johnston - Materials Advances, 2022 - pubs.rsc.org
Current silicon (Si) fin transistors rely on (100) and (110) crystallographically oriented
surfaces, and the proposed alternate channel transistor technology comprises materials with …
surfaces, and the proposed alternate channel transistor technology comprises materials with …
Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2O3
Germanium (Ge) and its heterostructures with compound semiconductors offer a unique
optoelectronic functionality due to its pseudo-bandgap nature, that can be transformed to a …
optoelectronic functionality due to its pseudo-bandgap nature, that can be transformed to a …
High Performance Ge pMOSFETs With HfO2/Hf-Cap/GeOx Gate Stack and Suitable Post Metal Annealing Treatments
SH Yi, KS Chang-Liao, TY Wu… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
An equivalent oxide thickness of~ 0.53 nm, gate leakage current density of/cm 2 at V FB+ 1
V, I ON/I OFF ratio of, subthreshold swing of 136 mV/dec, and peak hole mobility of 375 cm …
V, I ON/I OFF ratio of, subthreshold swing of 136 mV/dec, and peak hole mobility of 375 cm …
Performance improvement for Ge FinFET CMOS inverter with supercritical fluid treatment
DB Ruan, KS Chang-Liao, CW Liu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by
using a novel low temperature damage-free supercritical phase fluid (SCF) treatment …
using a novel low temperature damage-free supercritical phase fluid (SCF) treatment …
Electrical properties of ultra-thin body (111) Ge-On-Insulator n-channel MOSFETs fabricated by smart-cut process
We have systematically examined electrical characteristics of ultra-thin body (UTB)(111) Ge-
on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) …
on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) …