The rapid development of the fifth-generation mobile networks (5G) and Internet of Things
(IoT) is inseparable from a large number of miniature, low-cost, and low-power sensors and …

This article reports on the state-of-the-art of the development of aluminum nitride (AlN) thin-
film microelectromechanical systems (MEMS) with particular emphasis on acoustic devices …

Piezoelectric materials have attracted considerable attention over the last two decades
because many technologies utilize their core properties of piezoelectric materials. Previous …

MEMS switch is a movable device manufactured by means of semiconductor technology,
possessing many incomparable advantages such as a small volume, low power …

This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN)
piezoelectric layers for the fabrication of vertically deflecting nanoactuators. The films exhibit …

Power density has grown to be the dominant challenge for continued complementary metal–
oxide–semiconductor (CMOS) technology scaling. Together with recent improvements in …

With advances in telecommunications, an increasing number of services rely on high data
rate spectrum access. These critical services include banking, telemedicine, and exchange …

This paper reports experimental results on single-chip multi-frequency channel-select filters
based on self-coupled piezoelectric aluminum nitride (AlN) contour-mode …

Piezoelectric materials are widely used for microscale sensors and actuators but can pose
material compatibility challenges. This paper reports a post-CMOS compatible fabrication …

This paper reports on the implementation of low-voltage complementary mechanical logic
achieved by using body-biased aluminum nitride (AlN) piezoelectric microelectro …