Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction.
The following samples were examined:(i) single crystals grown at pressure of about 15 …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

Zinc oxide (ZnO) is one of the semiconductor materials with unique antimicrobial properties
towards various microorganisms. In this article, pure and Na doped ZnO nanopowders were …

In this paper we report the structural, electrical, and optical properties of epitaxial Zn 1− x Ga
x O films (x= 0–0.05) grown on single crystal sapphire (0001) substrate by pulsed laser …

We report the preparation and detailed structural and optical characterizations of single
phase gallium doped ZnO nanopowders. A low temperature solution-based technique was …

Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the
bulk lattice constant of InSb was determined between 32 and 325° C. A polynomial function …

Variations in the lattice parameter and crystal quality of commercially available GaAs (n-
type, Si: 1− 7× 1018 cm− 3 substrates have been studied by high-resolution X-ray diffraction …

The lattice parameter of undoped and boron doped polycrystalline diamond films has been
measured up to 8× 1020 B cm− 3. It varies slightly according to the three crystallographic …

A review of the existing literature shows that the accuracy with which the Al composition of a
coherent Al xGa 1− xAs GaAs heteroepitaxial layer can be determined from the lattice …

In multi-stacked polysilicon films, the stress was examined in terms of dopant distribution
and the polysilicon/polysilicon interface at which phosphorus and oxygen atoms were piled …