Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Plasma-assisted atomic layer deposition: basics, opportunities, and challenges
HB Profijt, SE Potts, MCM Van de Sanden… - Journal of Vacuum …, 2011 - pubs.aip.org
Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …
[HTML][HTML] Surface modifications to enhance dropwise condensation
Condensation is of paramount importance in numerous technological applications where
phase change processes take place. The physical nature of condensation from vapor to …
phase change processes take place. The physical nature of condensation from vapor to …
Characterization of Zn1-xLaxS thin films; compositional, surface, optical, and photoluminescence properties for possible optoelectronic and photocatalytic …
The influences of La3+ substituent levels (x= 0–15 at.%) on the structural, surface, optical,
photoluminescence, and optical constants of the Zn1-xLaxS (ZLS) thin films, synthesized by …
photoluminescence, and optical constants of the Zn1-xLaxS (ZLS) thin films, synthesized by …
Hydrophobicity of rare earth oxides grown by atomic layer deposition
Rare earth oxide (REO) atomic layer deposition (ALD) processes are investigated for
hydrophobic coatings. Thermal and plasma-enhanced ALD (PE-ALD) Er2O3 and Dy2O3 are …
hydrophobic coatings. Thermal and plasma-enhanced ALD (PE-ALD) Er2O3 and Dy2O3 are …
Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication
With devices being scaled down to the nanometer regime, the need for atomic thickness
control with high conformality is increasing. Atomic layer deposition (ALD) is a key …
control with high conformality is increasing. Atomic layer deposition (ALD) is a key …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
Indium oxide thin films are deposited via plasma-enhanced atomic layer deposition (PEALD)
to exploit their potential as a semiconductor in high mobility thin-film transistors (TFTs) …
to exploit their potential as a semiconductor in high mobility thin-film transistors (TFTs) …
Energy-enhanced atomic layer deposition for more process and precursor versatility
SE Potts, WMM Kessels - Coordination Chemistry Reviews, 2013 - Elsevier
Atomic layer deposition (ALD) is a popular deposition technique comprising two or more
sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced …
sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced …
Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO 2 films obtained from metal halide and amide precursors
Downscaling of complementary metal-oxide semiconductor (CMOS) gate stacks requires the
introduction of ultra-thin and high-k dielectrics such as HfO2. Atomic layer deposition (ALD) …
introduction of ultra-thin and high-k dielectrics such as HfO2. Atomic layer deposition (ALD) …