Abstract This Topical Review discusses insights into the physical mechanisms of
nanostructure solar cell operation as provided by numerical device simulation using a state …

The desire to access new alloys with desirable properties for semiconductor devices has
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …

InAs/AlAsxSb1− x quantum wells are investigated for their potential as hot carrier solar cells.
Continuous wave power and temperature‐dependent photoluminescence indicate a …

Self-assembled InAs quantum dots (QD) in a GaAs 1− x Sb x matrix are studied using
photoluminescence. Increasing the Sb composition in the GaAs 1− x Sb x matrix reduces the …

III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow
several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys …

The GaAsSbN dilute-nitride alloy can be grown lattice-matched to GaAs with a bandgap of 1
eV, making it an ideal candidate for use in multijunction solar cells. In this work, using …

We investigated the structural and optical properties of GaAs 1− x Sb x/GaAs
heterostructures grown by molecular beam epitaxy on GaAs (001) substrates for Sb …

Due to its 1 eV band gap and GaAs-matched lattice constant, GaInNAs has long been
considered for use in four-junction multi-junction solar cells; but, material quality issues have …

Abstract In x Al 1-x As 1-y Sb y is the only III-V material lattice-matched to InP with a direct
bandgap energy range as large as~ 1.45–1.80 eV, making it interesting for multiple …

The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple
junction solar cells (TJSCs) has shown the existence of In-and Sb-rich regions in the …