Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
[HTML][HTML] Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
Sc x Al 1-x N is a promising ultra-wide bandgap material with a variety of potential
applications in electronic, optoelectronic, and acoustoelectric devices related to its large …
applications in electronic, optoelectronic, and acoustoelectric devices related to its large …
Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high
electron mobility transistors due to its large dielectric constant and polarization. The …
electron mobility transistors due to its large dielectric constant and polarization. The …
[HTML][HTML] Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by …
GaN-based high electron mobility transistors (HEMTs) have demonstrated high frequency
power amplification with considerably larger output power densities than that available from …
power amplification with considerably larger output power densities than that available from …
Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys
H Pedersen, CW Hsu, N Nepal… - Crystal Growth & …, 2023 - ACS Publications
Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …
Epitaxial growth and characterization of AlInN-based core-shell nanowire light emitting diodes operating in the ultraviolet spectrum
We report the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-
emitting diodes with highly stable emission in the ultraviolet wavelength range. During …
emitting diodes with highly stable emission in the ultraviolet wavelength range. During …
Atom probe tomography of nitride semiconductors
Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
When grown at a high temperature (820 C) by ammonia-based molecular beam epitaxy (NH
3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN …
3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN …
Atom probe tomography on semiconductor devices
In this paper, state‐of‐the‐art Atom Probe Tomography (APT) on industrial semiconductor
products is reviewed to explore their device physics and to develop an understanding of …
products is reviewed to explore their device physics and to develop an understanding of …