A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

F Palumbo, C Wen, S Lombardo… - Advanced Functional …, 2020 - Wiley Online Library
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …

Nanoscale heat transfer–from computation to experiment

T Luo, G Chen - Physical Chemistry Chemical Physics, 2013 - pubs.rsc.org
Heat transfer can differ distinctly at the nanoscale from that at the macroscale. Recent
advancement in computational and experimental techniques has enabled a large number of …

Flexible Solution‐Processable Black‐Phosphorus‐Based Optoelectronic Memristive Synapses for Neuromorphic Computing and Artificial Visual Perception …

D Kumar, H Li, UK Das, AM Syed… - Advanced …, 2023 - Wiley Online Library
Being renowned for operating with visible‐light pulses and electrical signals, optoelectronic
memristive synaptic devices have excellent potential for neuromorphic computing systems …

[HTML][HTML] Nanoscale thermal transport. II. 2003–2012

DG Cahill, PV Braun, G Chen, DR Clarke… - Applied physics …, 2014 - pubs.aip.org
A diverse spectrum of technology drivers such as improved thermal barriers, higher
efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic …

Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling

S Larentis, F Nardi, S Balatti… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
Resistive-switching memory (RRAM) based on transition metal oxides is a potential
candidate for replacing Flash and dynamic random access memory in future generation …

Ultra-fast switching memristors based on two-dimensional materials

SS Teja Nibhanupudi, A Roy, D Veksler… - Nature …, 2024 - nature.com
The ability to scale two-dimensional (2D) material thickness down to a single monolayer
presents a promising opportunity to realize high-speed energy-efficient memristors. Here …

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

A Padovani, L Larcher, O Pirrotta… - … on electron devices, 2015 - ieeexplore.ieee.org
We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …

Design optimization of three-stacked nanosheet FET from self-heating effects perspective

S Rathore, RK Jaisawal, PN Kondekar… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Self-heating effect (SHE) is a severe issue arising in the nanoscale field-effect transistors
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …

Thermal transport in amorphous materials: a review

MC Wingert, J Zheng, S Kwon… - … Science and Technology, 2016 - iopscience.iop.org
Thermal transport plays a crucial role in performance and reliability of semiconductor
electronic devices, where heat is mainly carried by phonons. Phonon transport in crystalline …

On the thermal models for resistive random access memory circuit simulation

JB Roldán, G González-Cordero, R Picos, E Miranda… - Nanomaterials, 2021 - mdpi.com
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …