Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Chemical vapor deposition single‐crystal diamond: a review

JC Arnault, S Saada… - physica status solidi (RRL) …, 2022 - Wiley Online Library
With its outstanding physical properties, single‐crystal diamond is the material of choice for
future power electronics and quantum devices. The later application field is based on the …

Diamond for electronics: Materials, processing and devices

D Araujo, M Suzuki, F Lloret, G Alba, P Villar - Materials, 2021 - mdpi.com
Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

J Achard, V Jacques, A Tallaire - Journal of Physics D: Applied …, 2020 - iopscience.iop.org
Diamond hosts a wide variety of colour centres that have demonstrated outstanding optical
and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most …

Creation of silicon-vacancy color centers in diamond by ion implantation

S Lagomarsino, AM Flatae, H Kambalathmana… - Frontiers in …, 2021 - frontiersin.org
Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application,
such as in quantum technologies and sensing. Due to the strong luminescence …

Unveiling the microstructure and promising electrochemical performance of heavily phosphorus-doped diamond electrodes

S Baluchová, K Sung, Z Weiss, J Kopeček, L Fekete… - Electrochimica …, 2024 - Elsevier
The challenge of doping synthetic diamond with phosphorus stems from the atomic size
mismatch between phosphorus and carbon atoms, which previously hindered achieving …

Heavy phosphorus doping of diamond by hot-filament chemical vapor deposition

Y Katamune, A Izumi, K Ichikawa, S Koizumi - Diamond and Related …, 2023 - Elsevier
Abstract n-Type diamond is commonly fabricated with phosphorus doping and chemical
vapor deposition (CVD). Phosphorus atoms form a deep donor level of 0.57 eV below the …

Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

MA Pinault-Thaury, I Stenger, R Gillet, S Temgoua… - Carbon, 2021 - Elsevier
Abstracts A (113) diamond homoepilayer doped with phosphorus is grown. It presents high
crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm 2/Vs …

Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118},{115} and {113} single crystal diamond substrates

A Taylor, S Baluchová, L Fekete, L Klimša… - Diamond and Related …, 2022 - Elsevier
The use of {113} oriented single crystal diamond substrates has been reported for CVD
growth of high-quality p-type layers with increased doping efficiency, compared to the {100} …

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

DY Liu, LC Hao, ZA Chen, WK Zhao, Y Shen… - Applied Physics …, 2020 - pubs.aip.org
In this work, sulfur addition has been employed on the boron-doped diamond growth
process, and a significant regulation of the boron doping and the growth behavior has been …