A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band

T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …

Terahertz integrated circuits and systems for high-speed wireless communications: Challenges and design perspectives

P Heydari - IEEE Open Journal of the Solid-State Circuits …, 2021 - ieeexplore.ieee.org
This paper presents challenges and design perspectives for terahertz (THz) integrated
circuits and systems. THz means different things to different people. From International …

-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized -Core and Transmission Line-Based Zero-Degree Power Combining Networks

B Yun, DW Park, SG Lee - IEEE Journal of Solid-State Circuits, 2023 - ieeexplore.ieee.org
This article proposes high-gain, high-output-power, and high-power-added efficiency (PAE)
power amplifiers (PAs) by adopting an output power maximized (OPM) maximum achievable …

280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting

B Yun, DW Park, CG Choi, HJ Song… - 2022 IEEE Radio …, 2022 - ieeexplore.ieee.org
This paper reports a sub-THz high-gain amplifier design technique which is more flexible
and suitable for performance optimization based on a double-embedded-G_max-core. The …

A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency -Core With Dual-Band Matching

DW Park, B Yun, DR Utomo, JP Hong… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This work reports a concurrent dual-band amplifier with an extensive spacing between the
two bands by adopting a proposed dual-frequency maximum achievable gain () core with …

Analysis and Design of a Novel Gain-Boosting Technique Based on Lossy Series Embedding Network for Near- Embedded Amplifier

F He, Q Xie, Z Wang - … Transactions on Circuits and Systems I …, 2023 - ieeexplore.ieee.org
This paper presents a novel gain-boosted structure to improve the power gain of near-
amplifier, achieving a 185-GHz two-stage single-ended amplifier with a power gain of 6.85 …

A 240-GHz Wideband LNA with Dual Cores and Customized High-Speed Transistors in 40-nm CMOS

YK Chen, WZ Su, YF Tseng… - 2024 IEEE/MTT-S …, 2024 - ieeexplore.ieee.org
A 240-GHz wideband low-noise amplifier (LNA) incorporating high-speed customized
transistors and dual-peak G_\max cores is proposed in this work for 6G applications. The …

A 260-GHz Power Amplifier With 12.5-dBm and 21.4-dB Peak Gain Utilizing a Modified Coupled-Line-Balun Network

R Zhou, J Chen, Z Li, J Yu, D Tang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a prototype of a two-way differential power-combining sub-terahertz
(sub-THz) power amplifier (PA) utilizing a coupled-line-balun network in a 0.13-SiGe …

A Compact High-Gain D-Band LNA With Lossy Gain-Boosting Core Based on Slow-Wave Feedback

Y Qian, Y Shen, Y Ding, X Huang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article presents a CMOS D-band low-noise amplifier (LNA) employing a lossy gain-
boosting core with slow-wave feedback. By accounting for the practical losses of the …

D-Band Active Transmission Line With 33-GHz Bandwidth and 13-dB Gain at f /2

A Alizadeh, S Hassanzadehyamchi… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
This article presents a-band multisection active transmission line (ATL), where each ATL
Section consists of a microstrip TL and a cascode cell that senses the TL output and returns …