Next-generation crossover-free quantum Hall arrays with superconducting interconnections

M Kruskopf, AF Rigosi, AR Panna, M Marzano… - Metrologia, 2019 - iopscience.iop.org
This work presents precision measurements of quantized Hall array resistance devices
using superconducting, crossover-free and multiple interconnections as well as graphene …

Graphene quantum Hall effect parallel resistance arrays

AR Panna, IF Hu, M Kruskopf, DK Patel, DG Jarrett… - Physical Review B, 2021 - APS
As first recognized in 2010, epitaxial graphene on SiC (0001) provides a platform for
quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures …

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

N Zebardastan, J Bradford, J Lipton-Duffin… - …, 2022 - iopscience.iop.org
Epitaxial graphene on SiC is the most promising substrate for the next generation 2D
electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the …

Gateless and reversible Carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl

AF Rigosi, M Kruskopf, HM Hill, H Jin, BY Wu… - Carbon, 2019 - Elsevier
Monolayer epitaxial graphene (EG) has been shown to have clearly superior properties for
the development of quantized Hall resistance (QHR) standards. One major difficulty with …

Epitaxial graphene for quantum resistance metrology

M Kruskopf, RE Elmquist - Metrologia, 2018 - iopscience.iop.org
Graphene-based quantised Hall resistance standards promise high precision for the unit
ohm under less exclusive measurement conditions, enabling the use of compact …

Facile Bottom-up Preparation of WS2-Based Water-Soluble Quantum Dots as Luminescent Probes for Hydrogen Peroxide and Glucose

DR Hang, DY Sun, CH Chen, HF Wu… - Nanoscale Research …, 2019 - Springer
Abstract Photoluminescent zero-dimensional (0D) quantum dots (QDs) derived from
transition metal dichalcogenides, particularly molybdenum disulfide, are presently in the …

Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4‐TCNQ

Y Yin, A Chatterjee, D Momeni… - Advanced Physics …, 2022 - Wiley Online Library
The outstanding properties and the potential for large‐scale fabrication open a wide field for
electronic applications of epitaxial graphene on silicon carbide substrates. However, reliable …

Nano-infrared imaging of epitaxial graphene on SiC revealing doping and thickness inhomogeneities

M Fralaide, Y Chi, RB Iyer, Y Luan, S Chen… - Applied Physics …, 2024 - pubs.aip.org
We report on a nano-infrared (IR) imaging and spectroscopy study of epitaxial graphene on
silicon carbide (SiC) by using scattering-type scanning near-field optical microscopy (s …

Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer

C Chuang, CT Liang, GH Kim, RE Elmquist, Y Yang… - Carbon, 2018 - Elsevier
We report large, non-saturating magnetoresistance (MR) of∼ 140% in single layer chemical
vapor deposition (CVD) graphene with an h-BN capping layer at room temperature at B= 9 …

Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene

BY Chen, BW Chen, WY Uen, C Chen… - …, 2024 - iopscience.iop.org
A transfer-free graphene with high magnetoresistance (MR) and air stability has been
synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The …