Second harmonic treatment technique for bandwidth enhancement of GaN HEMT amplifier with harmonic reactive terminations

J Enomoto, R Ishikawa, K Honjo - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Source and load impedance conditions for the second harmonics have a great influence on
the efficiency of amplifiers. The bandwidth of high-efficiency operation is limited, since …

Peak-current-ratio-enhanced compact symmetrical Doherty amplifier design by using active harmonic control

HY Liu, KKM Cheng, C Zhai… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This article proposes a new and compact symmetrical Doherty power amplifier (DPA)
configuration that provides extended output-back-off (OBO) and enhanced load modulation …

Input circuits for RF amplifier devices, and methods of manufacture thereof

SS Mangaonkar, R Uscola - US Patent 9,979,361, 2018 - Google Patents
A packaged RF amplifier device includes a transistor, a first input circuit, and a second input
circuit. The first input circuit includes a first series inductance coupled between an input lead …

[图书][B] Advanced Design of High Efficiency Microwave Power Amplifiers for Wireless Applications

H Liu - 2021 - search.proquest.com
To accommodate the increasing demand for wireless communication, the cellular system
underwent rapid development in the past decades. As the most power-consuming and …