Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914%
at 3 K were demonstrated in epitaxial Fe/MgO/Fe (001) exchange-biased spin-valve …

Spinel MgAl 2 O 4 and family oxides are emerging barrier materials useful for magnetic
tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429 …

Perpendicular spin-transfer torque (p-STT) magnetic memory is gaining increasing interest
as a candidate for storage-class memory, embedded memory, and possible replacement of …

Spin-transfer torque random-access memory (STT-RAM) is gaining momentum as a
promising technology for high-density and embedded nonvolatile memory. Owing to random …

In this paper, a spintronic neuromorphic reconfigurable Array (SNRA) is developed to fuse
together power-efficient probabilistic and in-field programmable deterministic computing …

In this brief, we propose a Two-bits-cell based NAND-Like MRAM device. The structure is
composed of several stacking cells sharing the same heavy metal and each cell is …

Racetrack memory is a new type of high-capacity memory that stores data in magnetic
nanowires called racetracks. Data is transferred through the nanowires to the access port for …

With increased integration of technology in our lives, the arms race between chip
manufacturers to provide the latest and greatest to entice the consumer, only intensifies. A …

At the end of Silicon roadmap, keeping the leakage power in tolerable limit has become one
of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as, Spin …

This chapter presents a short introduction into the physics necessary to understand the
spintronic effects, like the magnetoresistance effect, spin-transfer torque, spin Hall effect, and …