GaN, AlN and InGaN have a polar wurtzite structure and epitaxial films of these materials
typically grow along the polar axis. Although the polarity of these nitrides has been studied …

A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The characteristic surface morphologies of GaN grown by plasma-assisted molecular beam
epitaxy under various growth conditions have been investigated. Three growth regimes one …

Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been
investigated and achieved. Exposure to HF and HCl solutions produced the lowest …

The structure, morphology, and optical properties of homoepitaxial GaN layers grown by
molecular beam epitaxy on metalorganic chemical vapor deposition (MOCVD)-grown GaN …

We have studied the effect of the III/V ratio and substrate temperature on the growth of GaN
and A1N films on Si (1 1 1) substrates by molecular beam epitaxy, where active nitrogen …

We discuss the energetics and structure of a laterally contracted Ga bilayer model for the Ga-
rich pseudo-1× 1 phase of the GaN (0001) surface. First-principles total energy calculations …

Abstract Reconstructions of the GaN (000 1) surface are studied for the first time. Using
scanning tunneling microscopy and reflection high-energy electron diffraction, four primary …