Chip size minimization for wide and ultrawide bandgap power devices
Chip size () optimization is key to the accurate analysis of device and material costs and the
design of multichip modules. It is particularly critical for wide bandgap (WBG) and ultrawide …
design of multichip modules. It is particularly critical for wide bandgap (WBG) and ultrawide …
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
Power semiconductor devices are utilized as solid-state switches in power electronics
systems, and their overarching design target is to minimize the conduction and switching …
systems, and their overarching design target is to minimize the conduction and switching …
Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs that Minimize Energy Dissipation
We investigate the impact of power MOSFET channel width on the power efficiency of a
switch-mode power supply. With this analysis, we derive a circuit-specific criterion that …
switch-mode power supply. With this analysis, we derive a circuit-specific criterion that …
Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches
The GaN HEMT power device emerges as a promising wide-bandgap component for
obtaining ultra-compact and very high efficiency power converters. Nevertheless, its long …
obtaining ultra-compact and very high efficiency power converters. Nevertheless, its long …
Modulation of Ciss of a 4H-SiC Planar MOSFET with a Shorter Sidewall and a Thicker Gate
SH Chen, CL Liu, CN Huang, HM Hsieh… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In this study, reducing the sidewall width of the 1200 V 4H-SiC planar power Metal-Oxide-
Semiconductor Field-Effect Transistors (MOSFETs) by 6.9% increases the input …
Semiconductor Field-Effect Transistors (MOSFETs) by 6.9% increases the input …
Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
B Wang - 2024 - vtechworks.lib.vt.edu
Abstract Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of
4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium …
4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium …
Beyond the Boundaries of State-of-the-Art Power Semiconductor Devices
DG Sdrulla, A Gendron, N Barr, M Held… - 2024 International …, 2024 - ieeexplore.ieee.org
First topic of this paper is related to RF SiC MOSFETs designed and manufactured for high
frequency and high-power applications. Discrete RF SiC transistors, Single Ended Modules …
frequency and high-power applications. Discrete RF SiC transistors, Single Ended Modules …
Negative Capacitance Analysis of a Statistically Significant Sample of Discrete Diodes
J Venter - … International Conference on Applied Electronics (AE), 2024 - ieeexplore.ieee.org
In this work, capacitance analysis of a statistically significant sample of 30 diodes were
conducted for a wide voltage range. For voltages below the built-in bulk potential, a well …
conducted for a wide voltage range. For voltages below the built-in bulk potential, a well …
PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0222105
Power semiconductor devices, which have a market size over $40 billion, are key enablers
for electric energy conversion in numerous applications such as mobile electronics, electric …
for electric energy conversion in numerous applications such as mobile electronics, electric …
[PDF][PDF] NUMERICAL SIMULATION OF A HEAT TREATMENT PROCESS OF 7055-SiCp COMPOSITES USING COMPUTATIONAL FLUID DYNAMICS
J Su, S Yuan - International Journal of Mechatronics and Applied …, 2021 - ijomam.com
The purpose of this study is to explore the phase transformation and property change of
7055-SiCp composite in heat treatment process, and find out the method to improve the heat …
7055-SiCp composite in heat treatment process, and find out the method to improve the heat …