Surface polarity plays a significant role in chemical etching of GaN in KOH solution, a
process that is important for quality control and device fabrication. In this work, basic …

Efficient GaN-based green micro light-emitting diodes (micro-LEDs) are critical for novel full-
color displays. In this work, triangular-mesa micro-LED arrays with full-A-side (sample A) …

InGaN micro-LEDs (⁠ μ LEDs) with their potential high-volume applications have attracted
substantial research interest in the past years. In comparison to other III–V semiconductors …

In this work, we present the fabrication and investigation of the properties of quasi-vertical
gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates …

We report the direct observation of radio-frequency negative differential resistance, via on-
wafer S-parameter measurements, in GaN-based impact ionization avalanche transit time …

We introduce a facile route for the top-down fabrication of ordered arrays of GaN nanowires
with aspect ratios exceeding 10 and diameters below 20 nm. Highly uniform thin GaN …

The ability to fabricate organized, dense arrays of GaN nanostructures with high aspect
ratios is of great interest for improving light extraction and absorption in optoelectronic …

The main objective of this work is to demonstrate and validate the feasibility of fabricating
(Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry …

We report a two-step process to obtain smooth and vertical {10− 10} m-plane facets in
AlGaN/GaN separate confinement heterostructures designed to fabricate ultraviolet lasers …

GaN vertical FinFETs on a bulk GaN substrate were fabricated with various fin widths and
400 ns pulsed IV measurements were performed to investigate their self-heating and DC-RF …