Electrical behavior of commercial off-the-shelf normally-off GaN power transistors under
heavy ion irradiation is presented based on technology computer aided design numerical …

Single event burnout (SEB) of enhancement mode GaN high-electron mobility transistors
(HEMTs) under heavy ion irradiation is systematically studied based on simulations in this …

In this article, the performance and triggering mechanism of the single-event burnout (SEB)
of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2-D numerical …

Power metal‐oxide semiconductor field effect transistors (MOSFETs) are more and more
used in atmospheric and space applications. Thus, it is essential to study the influence of the …

This brief first time presents single-event burnout (SEB) simulation results for conventional
AlGaN/GaN gate field plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET …

Two-dimensional numerical simulations have been performed to define the sensitive volume
and triggering criteria of single-event burnouts (SEBs) for standard and superjunction …

SiC UMOSFET is a kind of significant power device in the supply of aerospace. But it is
sensitive to space radiation. In this paper, the discrepancy of SEB behavior and research of …

This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power
planar vertical double-diffused MOSFET (VDMOSFET) with localized carrier lifetime control …

This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in
4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the …

This paper proposes a reverse conducting insulated gate bipolar transistors (RC-IGBT)
structure with a raised N-buffer layer (RNB-IGBT) to improve the single-event burnout (SEB) …