In recent years, infrared photodetectors using silicon hyperdoped with deep-level dopants
started to demonstrate extended light detection beyond the silicon's absorption edge. The …

In this paper, we developed a theoretical model for the photothermal deflection technique in
order to investigate the electronic parameters of three-layer semiconductor structures. This …

To clarify the proton energy dependence of proton irradiation damage in GaAs materials,
intrinsic and Si-doped GaAs were irradiated with 100 keV and 2 MeV protons at different …

In this study, we examined the E− band luminescence of a GaAs: N δ-doped superlattice
(SL) grown by metal organic vapor phase epitaxy with 0.15% nitrogen (N) using two …

The intensity of photoluminescence (PL) changes when an additional below‐gap excitation
(BGE) light modifies the electronic occupation of one of the crystalline defects acting as …

Crystalline defects in semiconductors form localized energy states inside the forbidden
energy gap and act as nonradiative recombination (NRR) levels. They accelerate …