Progress in the room-temperature optical functions of semiconductors

AB Djurišić, Y Chan, EH Li - Materials Science and Engineering: R: Reports, 2002 - Elsevier
Optical functions of a specific semiconductor in a particular wavelength region are often
needed in optics and optoelectronics research. Basic optical properties of some materials …

Active tuning of surface phonon polariton resonances via carrier photoinjection

AD Dunkelberger, CT Ellis, DC Ratchford, AJ Giles… - Nature …, 2018 - nature.com
Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for
subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor …

Immobilization of streptavidin on 4H–SiC for biosensor development

EH Williams, AV Davydov, A Motayed… - Applied surface …, 2012 - Elsevier
A sequential layer formation chemistry is demonstrated for the functionalization of silicon
carbide (SiC) appropriate to biosensing applications.(0001) 4H–SiC was functionalized with …

Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization

T Rajagopalan, X Wang, B Lahlouh… - Journal of Applied …, 2003 - pubs.aip.org
Nanocrystalline silicon carbide SiC thin films were deposited by plasma enhanced chemical
vapor deposition technique at different deposition temperatures (Td) ranging from 80 to 575 …

Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

S Shokhovets, R Goldhahn, G Gobsch… - Journal of Applied …, 2003 - pubs.aip.org
We demonstrate that variable angle spectroscopic ellipsometry (SE) is capable of
determining both ordinary and extraordinary dielectric functions (DFs) in the transparent …

Raman scattering characterization on SiC

H Harima - Microelectronic Engineering, 2006 - Elsevier
Raman scattering is a powerful non-contact and non-destructive characterization tool for SiC
polytypes for both the lattice and electronic properties. Here, I will briefly review two recent …

Dielectric function of epitaxial quasi-freestanding monolayer graphene on Si-face 6H-SiC in a broad spectral range

KK Tikuišis, A Dubroka, K Uhlířová, F Speck… - Physical Review …, 2023 - APS
We present a study of the optical properties of quasi-freestanding epitaxial monolayer
graphene grown on the Si face of 6H-SiC (0001) in a broad spectral range from midinfrared …

Fast and slow carrier recombination transients in highly excited 4H–and 3C–SiC crystals at room temperature

P Ščajev, V Gudelis, K Jarašiūnas… - Journal of Applied Physics, 2010 - pubs.aip.org
Nonequilibrium carrier recombination in highly excited epitaxial layers of 4H–SiC and free
standing 3C–SiC was analyzed numerically and studied experimentally by the time-resolved …

Controlled generation of photoemissive defects in 4H-SiC using swift heavy ion irradiation

A Chakravorty, B Singh, H Jatav, R Meena… - Journal of Applied …, 2021 - pubs.aip.org
Defects in SiC have shown tremendous capabilities for quantum technology-based
applications, making it necessary to achieve on-demand, high-concentration, and uniform …

The electronic structure and spectroscopic properties of 3C, 2H, 4H, 6H, 15R and 21R polymorphs of SiC

WY Ching, YN Xu, P Rulis, L Ouyang - Materials Science and Engineering …, 2006 - Elsevier
The electronic structure, bonding, and optical properties of six polymorphs of SiC: 3C, 2H,
4H, 6H, 15R, and 21R were studied by the density functional-based first-principles OLCAO …