Ultrahigh-responsivity ultraviolet photodetectors based on AlGaN/GaN double-channel high-electron-mobility transistors

H Wang, M Feng, Y Zhong, X Chen, H Gao… - ACS …, 2023 - ACS Publications
In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an
AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and …

Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects

F Cao, Y Liu, M Liu, Z Han, X Xu, Q Fan, B Sun - Research, 2024 - spj.science.org
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To
harness its potential, UV photodetectors (PDs) have been engineered. These devices can …

High-performance, low-power, and flexible ultraviolet photodetector based on crossed ZnO microwires pn homojunction

S Sha, K Tang, M Liu, P Wan, C Zhu, D Shi… - Photonics …, 2024 - opg.optica.org
Low-power, flexible, and integrated photodetectors have attracted increasing attention due
to their potential applications of photosensing, astronomy, communications, wearable …

Flexible Solar-Blind Photodetectors Based on β-GaO Films Transferred by a Stamp-Based Printing Technique

X Zhou, M Li, J Zhang, L Shang, K Jiang… - IEEE Electron …, 2022 - ieeexplore.ieee.org
A stamp-based printing technique was applied to transfer the-Ga films grown by pulsed laser
deposition (PLD) from Si substrates onto some flexible substrates, such as PET, PEN, and …

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection

B Uppalapati, D Gajula, M Bava, L Muthusamy, G Koley - Sensors, 2023 - mdpi.com
This paper investigates an AlGaN/GaN triangular microcantilever with a heated apex for
airflow detection utilizing a very simple two-terminal sensor configuration. Thermal …

Polarization-assisted AlGaN heterostructure-based solar-blind ultraviolet MSM photodetectors with enhanced performance

W Li, Y Wang, G Gu, F Ren, D Zhou… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, a high-performance metal–semiconductor–metal solar-blind ultraviolet
photodetector (UV PD) based on AlGaN heterostructure (AlGaNH) is fabricated. By utilizing …

Self-Polarized P (VDF-TrFE)/Carbon Black Composite Piezoelectric Thin Film

L Muthusamy, B Uppalapati, S Azad, M Bava, G Koley - Polymers, 2023 - mdpi.com
Self-polarized energy harvesting materials have seen increasing research interest in recent
years owing to their simple fabrication method and versatile application potential. In this …

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

Y Wang, K Cai, C Ye, C Liu, P Guo, H Qian… - ACS Applied …, 2024 - ACS Publications
In recent years, an ultraviolet (UV) photodetector (PD) utilizing two-dimensional electron gas
(2DEG) formed at the AlGaN/GaN heterostructure as a GaN-based recessed-gate high …

MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlGaN Hetero-Epilayers

S Dai, B Gong, X Wang, B Ye… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this work, we investigate the ability of a newly fabricated metal–semiconductor–metal
(MSM) solar-blind ultraviolet (UV) photodetector (PD). Three Al Ga N films with different Al …

[PDF][PDF] Self-Polarized P (VDF-TrFE)/Carbon Black Composite Piezoelectric Thin Film. Polymers 2023, 15, 4131

L Muthusamy, B Uppalapati, S Azad, M Bava, G Koley - 2023 - academia.edu
Self-polarized energy harvesting materials have seen increasing research interest in recent
years owing to their simple fabrication method and versatile application potential. In this …