In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The deep ultraviolet (DUV) micro-light emitting diode (μLED) has serious electron leakage
and low hole injection efficiency. Meanwhile, with the decrease in the size of the LED chip …

We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes
(LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical …

This paper principally presents the numerical investigation of electron blocking layers (EBL)
structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet …

The third-generation semiconductors are the cornerstone of the power semiconductor leap
forward and have attracted much attention because of their excellent properties and wide …

In order to improve the performance of AlGaN-based deep ultraviolet light-emitting diodes
(UV LEDs), the optical and physical properties of AlGaN-based deep UV LEDs with a p-type …

We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting
diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) …

In this paper, we theoretically investigate the effect of geometry of QWs and QBs on the
optical performance of AlGaN based UV-C LEDs. It is observed that the graded Al …

The AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with a graded
superlattice hole reservoir layer (HRL) can significantly enhance hole injection efficiency …

The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light
emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied …