Physical properties of indium nitride, impurities, and defects
SS Khludkov, IA Prudaev, OP Tolbanov - Russian Physics Journal, 2014 - Springer
A review of the literature on the InN physical properties and state of impurities and defects in
it based on the data published recently is presented. It is demonstrated that by the present …
it based on the data published recently is presented. It is demonstrated that by the present …
[PDF][PDF] Физические свойства нитрида индия, примеси и дефекты
Представлен обзор литературы по физическим свойствам InN, состоянию примесей и
дефектов в нем по данным, опубликованным в последнее время. Показано, что к …
дефектов в нем по данным, опубликованным в последнее время. Показано, что к …
The effect of growth parameters on the Mg acceptor in InxGa1‐xN:Mg and AlxGa1‐xN:Mg
ME Zvanut, WR Willoughby, UR Sunay… - … status solidi (c), 2014 - Wiley Online Library
Abstract InxGa1–xN and AlxGa1–xN alloys are used in many optoelectronic applications
due to their tunable band gap, but p‐type doping remains a challenge. To better understand …
due to their tunable band gap, but p‐type doping remains a challenge. To better understand …
III-Nitride Metalorganic Vapor-Phase Epitaxy
DD Koleske - Handbook of GaN Semiconductor Materials and …, 2017 - taylorfrancis.com
This article describes the metalorganic vapor-phase epitaxy (MOVPE) of group III-nitride
materials. Emphasis is placed on the chemistry, growth mechanisms, and materials …
materials. Emphasis is placed on the chemistry, growth mechanisms, and materials …
The Mg impurity in nitride alloys
ME Zvanut, WR Willoughby, UR Sunay… - AIP Conference …, 2014 - pubs.aip.org
Although several magnetic resonance studies address the Mg acceptor in GaN, there are
few reports on Mg doping in the alloys, where hole production depends strongly on the Al or …
few reports on Mg doping in the alloys, where hole production depends strongly on the Al or …
[PDF][PDF] The Effect of Growth Parameters on the Mg Acceptor InxGa1-xN: Mg and AlxGa1-xN: Mg.
InxGa1-xN and AlxGa1-xN alloys are used in many optoelectronic applications due to their
tunable band gap, but p-type doping remains a challenge. To better understand the Mg …
tunable band gap, but p-type doping remains a challenge. To better understand the Mg …
The source of holes in p-type InxGa1-xN films
ME Zvanut, WR Willoughby… - Gallium Nitride Materials …, 2013 - spiedigitallibrary.org
Mg-doped In x Ga 1-x N films are investigated using electron paramagnetic resonance
(EPR) spectroscopy. Surprisingly, the number of EPR-detected Mg-related acceptors …
(EPR) spectroscopy. Surprisingly, the number of EPR-detected Mg-related acceptors …