A wideband CMOS power amplifier with 52% peak PAE employing resistive shunt feedback for sub-6 GHz 5G applications
N Ginzberg, E Cohen - IEEE Microwave and Wireless …, 2022 - ieeexplore.ieee.org
This letter presents the design and implementation of a wideband power amplifier (PA) for
sub-6 GHz 5G wireless applications. The PA employs a Class-B biased cascode topology …
sub-6 GHz 5G wireless applications. The PA employs a Class-B biased cascode topology …
A 1.7-to-2.7 GHz 35–38% PAE multiband CMOS power amplifier employing a digitally-assisted analog pre-distorter (DAAPD) reconfigurable linearization technique
This brief presents a CMOS power amplifier (PA) employing a digitally-assisted analog pre-
distorter (DAAPD) reconfigurable linearization technique to reduce the back-off output power …
distorter (DAAPD) reconfigurable linearization technique to reduce the back-off output power …
High‐efficiency Doherty power amplifier based on codesign with bonding wires
C Zhong, S He, M Song, C Shen… - Microwave and Optical …, 2024 - Wiley Online Library
In this letter, a method for designing a Doherty power amplifier (DPA) using bare die and
bonding wires (BWs) is proposed. This method adjusts the geometric parameters of BWs to …
bonding wires (BWs) is proposed. This method adjusts the geometric parameters of BWs to …
An 800 MHz-to-3.3 GHz 20-MHz channel bandwidth WPD CMOS power amplifier for multiband uplink radio transceivers
This brief describes a novel Wideband Pre-Distortion (WPD) mechanism as a linearization
technique for bandwidth-limited CMOS power amplifiers (PAs). The WPD comprises a …
technique for bandwidth-limited CMOS power amplifiers (PAs). The WPD comprises a …
Envelope-tracking common-drain CMOS power amplifier with a switching-only supply modulator for LTE applications
MJ Zavarei, M Taherzadeh-Sani - Microelectronics journal, 2018 - Elsevier
This paper proposes an integrated envelope tracking CMOS power amplifier for LTE
application. It is shown in the paper that a common-drain power amplifier has improved …
application. It is shown in the paper that a common-drain power amplifier has improved …
An 0.4–2.8 GHz CMOS power amplifier with on-chip broadband-pre-distorter (BPD) achieving 36.1–38.6% PAE and 21 dBm maximum linear output power
A broadband 180 nm CMOS power amplifier (PA) operating from a frequency bandwidth of
400 MHz to 2.8 GHz is presented in this paper. The PA is integrated with an inductor-less …
400 MHz to 2.8 GHz is presented in this paper. The PA is integrated with an inductor-less …
A K-Band High-OP1dB Common-Drain Power Amplifier With Neutralization Technique in 90-nm CMOS Technology
Y Chang, Y Wang, H Wang - IEEE Microwave and Wireless …, 2019 - ieeexplore.ieee.org
This letter presents a fully integrated K-band high output 1-dB compression point (OP 1dB)
power amplifier (PA) fabricated in the 90-nm CMOS process. Common-drain (CD) structure …
power amplifier (PA) fabricated in the 90-nm CMOS process. Common-drain (CD) structure …
Linearity enhancement using a common-drain topology for envelope tracking CMOS power amplifiers
S Bhardwaj, S Moallemi… - 2020 IEEE 14th Dallas …, 2020 - ieeexplore.ieee.org
This work discusses about the linearity challenges of a radio frequency power amplifier (RF-
PA) using envelope tracking (ET) technique. ET modulators vary the supply voltage of a PA …
PA) using envelope tracking (ET) technique. ET modulators vary the supply voltage of a PA …
Common-drain CMOS power amplifier: An alternative power amplifier
MA Khan, R Negra - 2017 12th European Microwave …, 2017 - ieeexplore.ieee.org
In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm
CMOS technology. New PA topologies are required to address the issues of linearity …
CMOS technology. New PA topologies are required to address the issues of linearity …
Design of Common-Drain CMOS Power Amplifier for LTE Applications
G Indumathi, MN Fathima, I Paulkani - Handbook of Emerging Materials …, 2024 - Springer
Recent standards of wireless communication like Long-Term Evolution (LTE) use non-
constant envelope signals as an input and some modulation schemes to achieve high bit …
constant envelope signals as an input and some modulation schemes to achieve high bit …