Ferroelectric-based synapses and neurons for neuromorphic computing
The shift towards a distributed computing paradigm, where multiple systems acquire and
elaborate data in real-time, leads to challenges that must be met. In particular, it is becoming …
elaborate data in real-time, leads to challenges that must be met. In particular, it is becoming …
Ferroelectric tunnel junction based crossbar array design for neuro-inspired computing
Ferroelectric tunnel junction (FTJ) based crossbar array is a promising candidate for the
implementation of low-power and area-efficient neuro-inspired computing. In this paper, we …
implementation of low-power and area-efficient neuro-inspired computing. In this paper, we …
Charge-trapping-induced compensation of the ferroelectric polarization in FTJs: Optimal conditions for a synaptic device operation
In this work, we present a clear evidence, based on numerical simulations and experiments,
that the polarization compensation due to trapped charge strongly influences the ON/OFF …
that the polarization compensation due to trapped charge strongly influences the ON/OFF …
Performance enhancement and transient current response of ferroelectric tunnel junction: A theoretical study
HH Huang, YH Chu, TY Wu, MH Wu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
A comprehensive physical model is established to understand the device operation and
optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of …
optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of …
Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature
Since the discovery of ferroelectric properties in doped HfO2, various types of memory
devices have emerged based on this novel material. Especially, the ferroelectric tunnel …
devices have emerged based on this novel material. Especially, the ferroelectric tunnel …
Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks
We present a comprehensive characterization of amorphous alumina (a-Al 2 O 3) high-
dielectric in metal–insulator–metal (MIM) stacks, self-consistently extracting the space …
dielectric in metal–insulator–metal (MIM) stacks, self-consistently extracting the space …
MgO/HZO Based Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications
HH Lin, CC Lin, CT Shih, WY Jang… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this work, we fabricate a ferroelectric tunnel junction (FTJ) device with W/MgO/HZO/TiN
structure. The effect of MgO thickness on the FTJ properties of HZO films is studied. Device …
structure. The effect of MgO thickness on the FTJ properties of HZO films is studied. Device …
[HTML][HTML] Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications
WJ Park, HJ Kim, JH Lee, JH Kim, SH Uhm, SW Kim… - Nanomaterials, 2024 - mdpi.com
Plasma-enhanced atomic layer deposition (ALD) is a common method for fabricating Hf0.
5Zr0. 5O2 (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and …
5Zr0. 5O2 (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and …
Spiking Neural Networks and Ferroelectric Based Devices for Neuromorphic Computing
R Fontanini - 2023 - air.uniud.it
Thanks to the rise of IoT and wearable electronics, smart sensors and low-power edge
systems are becoming increasingly prevalent in our daily lives. In particular, the pursuit of …
systems are becoming increasingly prevalent in our daily lives. In particular, the pursuit of …
Other emerging memories
G Molas, L Grenouillet - Semiconductor Memories and Systems, 2022 - Elsevier
Resistive memories and ferroelectric memories offer very promising perspectives for future
memory generations, including embedded applications, but also open opportunities to …
memory generations, including embedded applications, but also open opportunities to …