Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=
A n+ B n 2+ C n 3+ f (n)⁠, where f (n) represents carrier leakage out of the active region. The …

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the
efficiency droop problem occurred at high current injection while improving overall quantum …

InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices,
increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation …

Blue InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with the conventional
AlGaN and AlGaN-GaN-AlGaN (AGA) electron blocking layer (EBL) are investigated …

Abstract In 0.16 Ga 0.84 N/In 0.05 Ga 0.95 N Multiple Quantum Well (MQW) structure grown
on a 70 nm thick high quality semi-bulk InGaN buffer layer is reported. Temperature …

Efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes (LEDs) has
been investigated by inserting an extra InGaN quantum well into the p-type side as the …

This chapter provides a brief history of solid‐state lighting (SSL): key materials and device
breakthroughs; the state‐of‐the‐art device and lamp architectures that those breakthroughs …

A key to strain engineering of piezoelectric semiconductor devices is the quantitative
assessment of the strain‐charge relationship. This is particularly demanding in current …