A 2 in. active‐matrix light‐emitting diode (AMLED) display by integration of the micro‐LED
onto the oxide thin‐film transistor (TFT) backplane using flip chip bonding is reported. A blue …

For newly developed semiconductors, obtaining high‐performance transistors and
identifying carrier mobility have been hot and important issues. Here, large‐area fabrications …

In this article, we performed gated four-probe measurements on amorphous indium gallium
zinc oxide (a-IGZO) thin-film transistors (TFTs) to extract their intrinsic mobility and contact …

A new device structure of oxide thin‐film transistor (TFT) having lower overlap capacitance
without scarifying the drain current is proposed. This can be used for high‐speed circuits …

The carrier transport mechanisms in indium–zinc–oxide thin-film transistors are investigated
in this paper by use of low-frequency noise (LFN). First, LFNs are measured in the range …

In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO)
thin-film transistors (TFTs) over a wide range of operation regimes and temperatures. From …

In this work, the characterization of high mobility thin-film transistors based on zinc nitride
films deposited at room temperature by magnetron radio-frequency sputtering is presented …

Bipolar electronic behavior has been demonstrated in amorphous Cu–Al–O thin films
prepared on soda-lime glass substrate via radio frequency (rf) magnetron sputtering …

The effect of fluorine (F) treatment on operation of back-channel-etched (BCE), inverted
staggered amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) is …

We investigate the intrinsic electrical characteristics and source/drain parasitic resistance in
p-type SnO TFTs fabricated using Ni electrodes based on the gated-four-probe method …