Vacuum‐Healing of Grain Boundaries in Sodium‐Doped CuInSe2 Solar Cell Absorbers
Alkali metal doping and grain boundaries (GB) have been at the center of attention within
the Cu (In, Ga)(S, Se) 2 photovoltaics community for years. This study provides the first …
the Cu (In, Ga)(S, Se) 2 photovoltaics community for years. This study provides the first …
[HTML][HTML] Universal alignment of surface and bulk oxygen levels in semiconductors
V Chakrapani - Applied Physics Letters, 2021 - pubs.aip.org
Oxygen and hydrogen are the two most important impurities in semiconductors because of
their ubiquitous presence in growth and device processing environments, and consequently …
their ubiquitous presence in growth and device processing environments, and consequently …
Properties of Co‐Evaporated RbInSe2 Thin Films
T Kodalle… - physica status solidi …, 2019 - Wiley Online Library
The formation of an Rb‐containing In‐Se compound at the surface of Cu (In, Ga) Se2 (CIGS)
thin films is assumed to be part of the mechanism of RbF post‐deposition treatments (PDTs) …
thin films is assumed to be part of the mechanism of RbF post‐deposition treatments (PDTs) …
First-principles study of defects at Σ3 grain boundaries in CuGaSe2
We present a first-principles computational study of cation–Se Σ 3 (112) grain boundaries in
CuGaSe 2. We discuss the structure of these grain boundaries, as well as the effect of native …
CuGaSe 2. We discuss the structure of these grain boundaries, as well as the effect of native …
In silico investigation of Cu (In, Ga) Se 2-based solar cells
H Mirhosseini, RKM Raghupathy, SK Sahoo… - Physical Chemistry …, 2020 - pubs.rsc.org
Photovoltaics is one of the most promising and fastest-growing renewable energy
technologies. Although the price-performance ratio of solar cells has improved significantly …
technologies. Although the price-performance ratio of solar cells has improved significantly …
Binding and energetics of oxygen at the CuInSe2 chalcopyrite and the CuInSe2/CdS interface
AG Marinopoulos - Physica Scripta, 2022 - iopscience.iop.org
The introduction of oxygen in thin-film solar cells based on the CuInSe 2 compound and
related CuInSe 2/CdS devices has been known to affect their electrical properties, with a …
related CuInSe 2/CdS devices has been known to affect their electrical properties, with a …
Oxidation/reduction cycles and their reversible effect on the dipole formation at surfaces
A Elizabeth, SK Sahoo, D Lockhorn, A Timmer… - Physical Review …, 2020 - APS
The defect-electronic properties of {112} microfaceted surfaces of epitaxially grown CuInSe
2 thin films are investigated by scanning tunneling spectroscopy and photoelectron …
2 thin films are investigated by scanning tunneling spectroscopy and photoelectron …
[PDF][PDF] Article type: Full Paper
T Kodalle, RKM Raghupathy, T Bertram, N Maticiuc… - core.ac.uk
DOI: 10 Page 1 1 DOI: 10.1002/pssr.201800564 Article type: Full Paper Fundamental Properties
of Co-Evaporated RbInSe2 Thin Films Tim Kodalle*, Ramya Kormath Madam Raghupathy,Tobias …
of Co-Evaporated RbInSe2 Thin Films Tim Kodalle*, Ramya Kormath Madam Raghupathy,Tobias …
Segregation of point defects at the CuInSe2 (001)/GaAs (001) interface
D Music, P Keuter - Solid State Communications, 2019 - Elsevier
Abstract The CuInSe 2 (001)/GaAs (001) interface is studied using density functional theory,
where GaAs is a common substrate to grow semiconductive CuInSe 2. The Se/Ga interfacial …
where GaAs is a common substrate to grow semiconductive CuInSe 2. The Se/Ga interfacial …