High field electron and hole transport in wurtzite phase GaN is studied using an ensemble
Monte Carlo method. The model includes the details of the full band structure derived from …

In this paper, we describe the state of the art in the numerical simulation of the carrier
transport properties of GaN and its ternary alloys. We outline the characteristics of our state …

This paper presents a demonstration of a 278 V GaN avalanche photodiode offering a
photoresponsivity of 60 A/W and capable of operating at high temperature with a high gain …

GaN avalanche photodiodes (APDs) were grown on both conventional sapphire and low
dislocation density free-standing (FS) c-plane GaN substrates. Leakage current, gain, and …

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) with ex situ
sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality …

M-plane GaN avalanche pin photodiodes on low dislocation density freestanding m-plane
GaN substrates were realized using metal-organic chemical vapor deposition. High quality …

Front-illuminated GaN-based separate absorption and multiplication (SAM) ultraviolet (UV)
avalanche photodiodes (APDs) with various photon detection areas are demonstrated …

A top-illuminated deep-ultraviolet Al 0.6 Ga 0.4 N pin avalanche photodiode (APD) structure
was designed and grown by metalorganic chemical vapor deposition on an AlN bulk …

The coming to age of GaN-based ultraviolet avalanche photodiodes (APDs) has made them
increasingly preferred over PIN photodetectors in several areas spanning from …

For humans, ultraviolet (UV) light from sun is harmful to our eyes and eye-related cells. This
detrimental fact requires scientists to search for a material that can efficiently absorb UV light …