The authors demonstrate and characterize type-II GaSb quantum dot (QD) formation on
GaAs by either Stranski-Krastanov (SK) or interfacial misfit (IMF) growth mode. The growth …

The authors report the optical characteristics of Ga Sb∕ Ga As self-assembled quantum
dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of …

Detailed studies with spectral and time-resolved photoluminescence, photoluminescence
excitation, and absorption spectroscopies show the formation of type-II quantum structures …

The authors report the formation and optical characteristics of type-II, strain-relieved, and
densely stacked Ga Sb∕ Ga As quantum dots (QDs) using an interfacial misfit (IMF) growth …

Optical properties and carrier dynamics in type-II Ga (As) Sb/GaAs quantum dots (QDs)
embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the …

We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …

We investigate the effects that the carrier dynamics have on the temperature and excitation
intensity dependence of the photoluminescence (PL) of self-assembled InAs∕ GaAs …

Liquid phase epitaxial growth from a saturated GaSb solution in Ga with 1.3 at.% Bi, on
GaAs substrates is shown to produce quantum dots with a Bi content of 0.5 at.%. The height …

Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that
does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the …

A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for
the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski …