Mid-infrared integrated photonics on silicon: a perspective
The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …
preferred substrate platform for photonic integration. While most silicon-based photonic …
Recent advances in light sources on silicon
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …
research. Several important breakthroughs were made in this field in the past few years. In …
Heterogeneously integrated InP\/silicon photonics: fabricating fully functional transceivers
R Jones, P Doussiere, JB Driscoll, W Lin… - IEEE …, 2019 - ieeexplore.ieee.org
Silicon (Si) photonics research and development started more than 30 years ago and has
intensified in the last 15 years as levels of device functionality, photonic integration, and …
intensified in the last 15 years as levels of device functionality, photonic integration, and …
On-chip infrared photonics with Si-Ge-heterostructures: What is next?
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Crystal phase control during epitaxial hybridization of III‐V semiconductors with silicon
M Rio Calvo, JB Rodriguez, C Cornet… - Advanced Electronic …, 2022 - Wiley Online Library
The formation and propagation of anti‐phase boundaries (APBs) in the epitaxial growth of III‐
V semiconductors on Silicon is still the subject of great debate, despite the impressive …
V semiconductors on Silicon is still the subject of great debate, despite the impressive …
Universal description of III-V/Si epitaxial growth processes
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically
resolved microscopy shows that monodomain three-dimensional islands are observed at the …
resolved microscopy shows that monodomain three-dimensional islands are observed at the …
Widely tunable silicon Raman laser
Stimulated Raman scattering is an effective means of wavelength conversion and can
largely extend the operating spectral range of an optical source. We demonstrate a high …
largely extend the operating spectral range of an optical source. We demonstrate a high …
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut
Here we clarify the central role of the miscut during group III-V/group IV crystal growth. We
show that the miscut impacts the initial antiphase domain distribution, with two distinct …
show that the miscut impacts the initial antiphase domain distribution, with two distinct …
Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board
F Zubov, M Maximov, E Moiseev, A Vorobyev… - Optics Letters, 2021 - opg.optica.org
We study the impact of improved heat removal on the performance of InGaAs/GaAs
microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial …
microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial …
Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters
Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon
photonic applications. In addition to the well-developed hybrid bonding techniques, the …
photonic applications. In addition to the well-developed hybrid bonding techniques, the …