Linear temperature sensors in high-voltage GaN-HEMT power devices
R Reiner, P Waltereit, B Weiss… - 2016 IEEE Applied …, 2016 - ieeexplore.ieee.org
This work presents a high-voltage GaN-based power HEMT with a highly-linear,
monolithically-integrated temperature sensor. The principle is shown and compared to other …
monolithically-integrated temperature sensor. The principle is shown and compared to other …
Electrothermal mapping of AlGaN/GaN HEMTs using microresistance thermometer detectors
Self-heating effects in AlGaN/GaN high-electron mobility transistors (HEMTs) can notably
reduce electron mobility and produce reliability concerns. Electrothermal characterization …
reduce electron mobility and produce reliability concerns. Electrothermal characterization …
A high-precision CMOS temperature sensor with thermistor linear calibration in the (− 5 C, 120 C) temperature range
CC Wang, ZY Hou, JC You - Sensors, 2018 - mdpi.com
A high-precision Complementary Metal-Oxide-Semiconductor (CMOS) temperature sensor
for (− 5° C, 120° C) temperature range is designed and analyzed in this investigation. The …
for (− 5° C, 120° C) temperature range is designed and analyzed in this investigation. The …
Ultrasmall and Ultrathin Ni-based Resistance Temperature Detector Integrated in Micro Thermoelectric Devices for In Situ Temperature Measurement
Y Huang, W Zhu, J Zhou, Y Yu, Q Zhang… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
With the ever-increasing demand of miniature chip cooling and self-powered technology,
more attention has arisen on micro thermoelectric (TE) devices. Nevertheless, accurate …
more attention has arisen on micro thermoelectric (TE) devices. Nevertheless, accurate …
Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications
F Cozette, M Lesecq, A Cutivet… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter describes a new method to extract the operating temperature in short-gate length
AlGaN/GaN high electron mobility transistors (HEMTs) dedicated to RF applications. For this …
AlGaN/GaN high electron mobility transistors (HEMTs) dedicated to RF applications. For this …
Design and performance analysis of a multilayer sea ice temperature sensor used in polar region
G Zuo, Y Dou, X Chang, Y Chen, C Ma - Sensors, 2018 - mdpi.com
Temperature profiles of sea ice have been recorded more than a few decades. However,
few high-precision temperature sensors can complete the observation of temperature profile …
few high-precision temperature sensors can complete the observation of temperature profile …
[PDF][PDF] 共振隧穿二极管THz 辐射源研究进展
彭雨欣， 孟雄， 孟得运 - Journal of Terahertz Science and Electronic …, 2023 - researching.cn
太赫兹技术被称为“改变未来世界十大技术之一”, 对基础科学研究, 国民经济发展和国防建设具有
重要意义, 尤其在未来6G 通信方面举足轻重. 太赫兹波源是整个太赫兹技术研究的基础 …
重要意义, 尤其在未来6G 通信方面举足轻重. 太赫兹波源是整个太赫兹技术研究的基础 …
Transient Thermal Characterization for GaN HEMTs with p-Type Gate
T Hara, T Funaki - Transactions of The Japan Institute of Electronics …, 2020 - jstage.jst.go.jp
Transient Thermal Characterization for GaN HEMTs with p-Type Gate Page 1 E19-002-1 Hara
and Funaki: Transient Thermal Characterization for GaN HEMTs with p-Type Gate (1/13) 1 …
and Funaki: Transient Thermal Characterization for GaN HEMTs with p-Type Gate (1/13) 1 …
Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor
F Cozette, M Lesecq, N Defrance… - 2018 48th European …, 2018 - ieeexplore.ieee.org
This paper describes a new method to measure AlGaN/GaN High Electron Mobility
Transistors (HEMTs) operating temperature in devices dedicated to RF application. A …
Transistors (HEMTs) operating temperature in devices dedicated to RF application. A …
Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors
Transistor's thermal impedance is a parameter of prime importance to predict the device
peak temperature in applications of power and RF electronics featuring time‐dependent …
peak temperature in applications of power and RF electronics featuring time‐dependent …