Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth
D Yan, Y Wang, R Shang, G Zhang - ACS omega, 2024 - ACS Publications
Floating silicon is particularly suitable for the production of power devices and detectors due
to its high purity and high resistivity. However, when the crystal diameter increases to 200 …
to its high purity and high resistivity. However, when the crystal diameter increases to 200 …
Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon
In this paper, the calculation of dopant concentration for 200 mm floating zone silicon was
carried out. The numerical model includes natural convection, thermocapillary convection …
carried out. The numerical model includes natural convection, thermocapillary convection …
OPTIMIZATION OF THE SHAPE OF HIGH-FREQUENCY INDUCTOR FOR THE PEDESTAL GROWTH OF SILICON CRYSTALS.
K Surovovs, A Kravtsov… - Magnetohydrodynamics …, 2019 - search.ebscohost.com
The present paper is focused on mathematical modelling and experimental development of
the pedestal growth of silicon crystals. In the considered crystal growth method, the melt is …
the pedestal growth of silicon crystals. In the considered crystal growth method, the melt is …