A comprehensive study of displacement damage and total ionisation dose effects on 4H‐
silicon carbide power devices is presented. Power diodes and transistors produced by …

While silicon has been a steadfast semiconductor material for the past 50 years, it is now
facing competition from other materials, especially for detector design. In that respect, due to …

Control of carrier lifetimes in nitrogen (N)-doped n-type 4H-SiC epilayers was attempted by
intentional boron (B) doping. Doping concentrations of B were controlled to be within 10 15 …

Abstract 4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim
to place the ion range into the low-doped n-type epitaxial layer. The diodes were …

Electronic properties of radiation damage produced in 4H–SiC by neutron irradiation and its
effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated …

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence
range 1.0× 1012 to 1.0× 1015 ions/cm2. The effects of irradiation were investigated by …

The impact of proton and electron irradiation on the electrical parameters of 4H-SiC
nMOSFETs has been investigated by using time bias stress instability method. This study …

We investigate defects in 4H-SiC pn junction diodes introduced trough nanoindentation
procedure. A nanoindentation load range between 3 mN and 15 mN was explored …

In this article, the effect of local radiation damage on the electrical characteristics of 1700 V
4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects …

The effect of neutron, electron and ion irradiation on electrical characteristics of unipolar
1700V SiC power devices (JBS diodes, JFETs and MESFETs) was investigated. DLTS …