The absorption spectra of CdIn 2 S 4 have been measured at various temperatures between
4.7 K and 412 K, and analyzed in the region of the absorption coefficient from 1 to 2× 10 4 …

CdIn2S4 and β‐In2S3 crystals are grown by direct melting of stoichiometric mixtures of their
components. The absorption coefficients are measured as a function of the wavelength of …

The reflectivity of CdIn 2 S 4 has been measured at 300 K and 77 K in the 2–10 eV energy
range. The analysis of the low temperature data by means of the Kramers Kronig relations …

Abstract is a narrow-gap semiconductor with a layered structure, isoelectronically analogous
to PbS. Large single crystals were grown by the Bridgman-Stockbarger method from the melt …

Photovoltaic spectra were measured at 300 and 100 K on Au CdIn 2 S 4 Schottky barriers
in the spectral range near the band edge of the compound. Analysis of the spectra gives the …

The precursor, bis-(morpholinodithiocarbamate-s, s′)-Cd–Zn–In has been prepared and
pyrolyzed to obtain ZnCdInS thin films. The results of the compositional studies carried out …

The first observation of thermal Brillouin spectra in CdIn 2 S 4 single crystals has been made
at room temperature by using a sensitive photon-counting system, a piezoelectrically …

Piezoresistance of n‐type CdIn2S4 single crystals is measured for various directions of the
crystal axis. The values at room temperature are isotropic but large, in particular for …

A detailed analysis of the excitation and recombination processes of the charge carriers in
CdIn2S4 crystals is discussed. The luminescence spectra and the luminescence excitation …

Dans ce papier nous discutons un'analyse détaillée des processus d'excitation et de
récombinaison des porteurs de charge dans le CdIn₂S4. Nous présentons les spectres de …