Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

Amorphous InGaZnO x (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel
displays due to their beneficial properties. However, the mobility of∼ 10 cm2/(V s) for the a …

The effects of sputtered atom flux on the electrical properties of a-IGZO films before and after
thermal annealing were examined by varying the fluxes of sputtered atoms at the substrate …

In this work, we performed a systematic study of the physical properties of amorphous
Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O …

Abstract In–Ga–Zn–O (IGZO) sputtering in an Ar, O 2, and H 2 atmosphere followed by
annealing represents an effective method for defect reduction of the resulting films. The …

Abstract In–Sn–Ga–O (ITGO) thin-film transistors (TFTs) fabricated by atomic layer
deposition (ALD) are promising candidates for widespread semiconductor applications …

With the development of novel device applications, eg in the field of robust and recyclable
paper electronics, came an increased demand for the understanding and control of IGZO …

In this study, the reliability and electrical properties of indium gallium zinc oxide (IGZO) thin
film transistors (TFTs) are investigated when the working pressure of the sputtering system is …

Transition metal (TM)‐doped amorphous gallium oxide (a‐GO: TMx) is studied as an
inorganic thin‐film phosphor. Cr is selected as an emission center based on preliminary …

Abstract Structure-property correlation in vanadium oxide nanoscale thin films used in
uncooled thermal detectors is a crucial question for device performance. The purpose of this …