High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

S Xu, W Wang, YC Huang, Y Dong… - Optics express, 2019 - opg.optica.org
We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge
multiple-quantum-well (MQW) pin photodiode, exhibiting a 3-dB bandwidth (f3-dB) above 10 …

Avalanche photodetectors with photon trapping structures for biomedical imaging applications

C Bartolo-Perez, S Chandiparsi, AS Mayet… - Optics express, 2021 - opg.optica.org
Enhancing photon detection efficiency and time resolution in photodetectors in the entire
visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging …

A new paradigm in high-speed and high-efficiency silicon photodiodes for communication—Part I: Enhancing photon–material interactions via low-dimensional …

H Cansizoglu, EP Devine, Y Gao… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Photodetectors (PDs) used in communication systems require ultrafast response, high
efficiency, and low noise. PDs with such characteristics are increasingly in demand for data …

A high‐detectivity, fast‐response, and radiation‐resistant TiN/CdZnTe heterojunction photodiode

MM Solovan, AI Mostovyi… - Advanced Optical …, 2023 - Wiley Online Library
A novel high‐performance ultraviolet–visible–near‐infrared (300–820 nm) heterojunction
photodiode based on radiation‐resistant semiconductor materials is proposed. A titanium …

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm

H Cansizoglu, C Bartolo-Perez, Y Gao… - Photonics …, 2018 - opg.optica.org
In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved
efficiency are demonstrated. With photon-trapping microhole features, the external quantum …

A new paradigm in high-speed and high-efficiency silicon photodiodes for communication—Part II: device and VLSI integration challenges for low-dimensional …

H Cansizoglu, AF Elrefaie… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The ability to monolithically integrate high-speed photodetectors (PDs) with silicon (Si) can
contribute to drastic reduction in cost. Such PDs are envisioned to be integral parts of high …

High-speed high-efficiency photon-trapping broadband silicon PIN photodiodes for short-reach optical interconnects in data centers

S Ghandiparsi, AF Elrefaie, AS Mayet… - Journal of Lightwave …, 2019 - ieeexplore.ieee.org
Monolithic integration of high-speed, high-efficiency photodiodes with receiver electronics
on a single silicon chip is a key to reduce cost and improve the performance of data centers' …

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

B Son, SH Shin, ZJ Zhao, BK Ju… - Advanced Materials …, 2023 - Wiley Online Library
Abstract Silicon (Si) nanowire (NW) array is a promising light‐trapping platform due to the
strong interaction between light and nanostructure. A photodetector benefits from the …

Single microhole per pixel in CMOS image sensors with enhanced optical sensitivity in near-infrared

EP Devine, W Qarony, A Ahamed… - IEEE Sensors …, 2021 - ieeexplore.ieee.org
Silicon photodiode-based CMOS sensors with backside-illumination for 300–1100 nm
wavelength range were studied. We showed that a single hole in the photodiode increases …

Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm

B Son, H Zhou, Y Lin, KH Lee, CS Tan - Optics Express, 2021 - opg.optica.org
Gourd-shaped hole array germanium (Ge) vertical pin photodiodes were designed and
demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of …