Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation
Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric
materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal …
materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal …
Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)
Proton irradiation-induced effects on AlGaN/GaN high electron mobility transistors (HEMTs)
were studied by emulating a certain space radiation environment (upstream of the earth's …
were studied by emulating a certain space radiation environment (upstream of the earth's …
Effect of defects properties on InP-based high electron mobility transistors
SX Sun, MM Chang, MK Li, LH Ma, YH Zhong… - Chinese …, 2019 - iopscience.iop.org
The performance damage mechanism of InP-based high electron mobility transistors
(HEMTs) after proton irradiation has been investigated comprehensively through induced …
(HEMTs) after proton irradiation has been investigated comprehensively through induced …
Effect of electron irradiation fluence on InP-based high electron mobility transistors
S Sun, P Ding, Z Jin, Y Zhong, Y Li, Z Wei - Nanomaterials, 2019 - mdpi.com
In this paper, the effect of electron irradiation fluence on direct current (DC) and radio
frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated …
frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated …
Degradation of electrical performance and radiation damage mechanism of cascode GaN HEMT with 80 MeV proton
Y Lu, R Cao, H Li, X Yang, X Zeng, Y Xue - Physica Scripta, 2024 - iopscience.iop.org
In this paper, proton irradiations on Cascode GaN HEMT power device with an energy of 80
MeV and fluences of 2× 10 11 p/cm 2 and 6× 10 11 p/cm 2 have been carried out, where the …
MeV and fluences of 2× 10 11 p/cm 2 and 6× 10 11 p/cm 2 have been carried out, where the …
Analysis of the effects of high-energy electron irradiation of GaN high-electron-mobility transistors using the voltage-transient method
The effects of high-energy (1 MeV) electron irradiation on the electrical and trapping
properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated …
properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated …
[HTML][HTML] Effects of 1 MeV electron radiation on the AlGaN/GaN High electron mobility transistors
S Pan, S Feng, X Li, Z Feng, X Lu, K Bai… - Journal of …, 2024 - jos.ac.cn
In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron
mobility transistors (HEMTs) were investigated after different radiation doses. The changes …
mobility transistors (HEMTs) were investigated after different radiation doses. The changes …
Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor …
In this work, we investigated the time-dependent dielectric breakdown (TDDB)
characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor …
characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor …
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
ZS Kim, HS Lee, SB Bae, ES Nam… - Journal of Nanoscience …, 2020 - ingentaconnect.com
Fabrication of normally-off field effect transistors (FETs) possessed uniform turn-on threshold
voltage (V th) is of special interests. In this work, they were fabricated using dry etching …
voltage (V th) is of special interests. In this work, they were fabricated using dry etching …