The effect of wetting layers on the strain and electronic structure of InAs self-assembled
quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and …

In this paper, we present a combined optical and structural study of GaAs-hosted InAs sub-
monolayer QD (SML-QD) vertical multi-stacks. The main feature of this paper is to …

Strain–induced intermixing in sub–monolayer (SML) quantum dots (QDs) affects primarily
the dot size distribution in an erratic way and also the inter–dot coupling efficiency for carrier …

We report a Raman scattering investigation of InAs vibrational modes in multiple layers of
InAs self-assembled quantum dots in a GaAs matrix. The Raman peak associated with …

We present an experimental study of In As∕ Al As (Ga As) periodical structures with InAs
and AlAs quantum dots by means of Raman spectroscopy. Experiments on the asymmetric …

In this paper, we discuss detailed strain effects on a bilayer InAs quantum dot with varying
GaAs barrier thickness. The exploration of the range of GaAs barrier thickness effect on the …

We show that Raman scattering is a sensitive technique for probing the degree of Ga
intermixing in In (Ga) As∕ Ga As self-assembled quantum dots (QDs). The shifts of the QD …

Graphene was grown by chemical vapor deposition and successfully transferred onto
InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy on a (001) GaAs …

We use Raman scattering to study the composition of InAs self-assembled quantum dots
(QDs) embedded in an Al x Ga 1− x As matrix. When Al is introduced into the matrix (0.15< …

We report Raman scattering studies of optical phonons in InGaAs/GaAs quantum dot (QD)
structures grown by atomic layer molecular beam epitaxy to explore formation of QDs and …