The progressively decreasing feature size of the circuit components has tremendously
increased the need for the global surface planarization of the various thin film layers that …

Polishing processes are critical to high value production processes such as IC
manufacturing. The fundamental material removal mechanisms, howeve, are poorly …

Chemical mechanical polishing (CMP) is an essential semiconductor manufacturing process
because of its local and global planarization ability in fabricating highly integrated devices …

This paper investigates the effects of oxidizer concentration, pH and slurry flow rate on the
material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The …

Recently, a comprehensive model has been developed by Luo and Dornfeld (" Material
removal mechanism in chemical mechanical polishing: theory and modeling", IEEE Trans …

It is well known that the chemical reaction between an oxide layer and a water-based slurry
produces a softer hydroxylated interface layer. During chemical-mechanical polishing …

With magnetic heads operating closer to hard disks, the hard disks are forced to be ultra-
smooth. At present, chemical–mechanical polishing (CMP) has become a widely accepted …

Molecular dynamics simulation is employed to analyze the effect of sliding, rolling and
oscillating movements on nanotribology properties of a diamond abrasive on a silicon …

This paper presents a mathematical model that describes the chemical–mechanical synergy
and mechanism of material removal in chemical–mechanical polishing (CMP). The physical …

This paper addresses the influence of nano-scale abrasive particle size in the polishing of
thermally-grown silicon dioxide on 100 mm diameter, p-type,(100), single crystal silicon …