Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …

We studied the effect of free carriers in the nonmagnetic spacer layer on the magnetic
properties of GaMnAs/GaAs superlattice (SL) systems. One of the SLs contained GaAs …

Motivated by the discovery of the ferromagnetic order in V-doped Sb2Te3 and Fe-doped
Bi2Te3 bulk crystals, the study of the transition metal (TM) doped tetradymite-type …

Semiconductor trilayer structures with ferromagnetic Sb 2− x Cr x Te 3 layers separated by a
nonmagnetic Sb 2 Te 3 layer of different thickness have been fabricated by molecular beam …

The InMnAs layers with ferromagnetic properties at room temperature are prepared by laser
ablation. This is confirmed by the results of investigating the anomalous Hall and magneto …

Interlayer exchange coupling (IEC) between GaMnAs layers in GaMnAs/InGaAs/GaMnAs tri-
layers was studied by magnetization measurements. Minor hysteresis loops are observed to …

All of today's semiconductor devices-diodes, transistors, electronic chips, light emitting
diodes, and semiconductor diode lasers-are based only on the charge of the electron. Since …

Легированные марганцем полупроводники A3B5, такие как InMnAs и GaMnAs,
вызывают большой интерес из-за наблюдения в них ферромагнетизма и являются на …

The electronic and magnetoresistive properties of metal/oxide/p-In Mn As magnetic tunnel
junctions have been characterized. Ni and Al were each used as the metal electrode, while …

We investigated spin-dependent tunneling properties in fully epitaxial Fe/ZnSe/In 1− x Mn x
As with a metal/insulator/semiconductor structure. A tunneling magnetoresistance (TMR) …