Atomic scale control of the thickness of thin film makes atomic layer deposition highly
advantageous in the preparation of high quality super-lattices. However, precisely …

We report on the bipolar resistive switching behavior of a SiO 2/Si multilayer (ML) structure
measured without current compliance for non-volatile memory applications. The SiO 2/Si ML …

In this paper, we report on the enhanced control of resistive switching in multilayer Si/SiO 2
structures, which permit the formation of Si nanocrystals with a typical size of 5.88 nm and …

Si nanocrystals (NCs) are often prepared by thermal annealing of multiple stacks of
alternating sub-stoichiometric SiO x and SiO2 nanolayers. It is frequently claimed that in …

In this work, the structural and optical properties of co-sputtered SRO (Silicon Rich Oxide)
films are studied as a function of the annealing temperature and the change in the Si …

We investigate the effect of room-temperature hydrogen-plasma treatment on the
photoconductivity of SiGe nanoparticles sandwiched within SiO 2 layers. An increase in …

We report results of investigating carrier recombination in silicon nanocrystal/silicon dioxide
superlattices. The superlattices prepared by nitrogen-free plasma enhanced chemical …

Thermal annealing temperature and time dictate the microstructure of semiconductor
materials such as silicon nanocrystals (Si NCs). Herein, atom probe tomography (APT) and …

The achievement of an efficient all‐Si electrically‐pumped light emitter is a major milestone
in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive …

Thin films consisting of silicon nanocrystals fabricated by high silicon content in silicon rich
oxide show unique properties of decreasing resistivity and increasing light absorption while …