In this article, using a Silvaco TCAD simulator, the impact of Graphene Channel Double Gate Dual Gate Material Vertical tunnel FET on the analog and RF application is studied. We …
In this work, we investigate the effects of changing device parameters such as channel length and gate dielectric of n-type double gate (DG) silicon tunneling field effect transistor …
T Chawla, M Khosla, B Raj - IEEE VLSI Circuits and systems Letter, 2020 - researchgate.net
In this article, Double gate Dual material Germanium on insulator Vertical tunnel field effect transistor (DGDM-GeOI VTFET) device is proposed for Ultra-low power and high …
S Bala, M Khosla - Superlattices and Microstructures, 2018 - Elsevier
In this paper, electrostatic doped Tunnel carbon nano tube field effect transistor (ED-Tunnel CNTFET) is proposed. Additional gates in the source and drain regions draw an appropriate …
This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
In this paper, a 2D analytical potential model for n+ SiGe Gate stacked linearly graded work function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
This paper illustrates delta-doped Hetro-dielectric Germanium on insulator vertical tunnel field-effect transistor (DDH-GeOI VTFET) and its 2D simulations are investigated using …
Recent experimental studies have shown lanthanum-doped hafnium oxide (La: HfO 2) possessing ferroelectric properties. This material is of special interest since it is based on …
In this work, the performance of a Si 0.5 Ge 0.5 sourced dual electrode doping-less Tunnel FET (DEDLTFET) biosensor using dielectric modulation is studied for different cavity length …